upa2451tl Renesas Electronics Corporation., upa2451tl Datasheet

upa2451tl

Manufacturer Part Number

upa2451tl

Description

N-channel Mos Field Effect Transistor For Switching

Manufacturer

Renesas Electronics Corporation.

Datasheet

1.UPA2451TL.pdf (8 pages)

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Document No.

Date Published

Printed in Japan

ORDERING INFORMATION

ABSOLUTE MAXIMUM RATINGS (T

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When

DESCRIPTION

directly by a 2.5 V power source.

FEATURES

Drain to Source Voltage (V

Gate to Source Voltage (V

Drain Current (DC) (T

Drain Current (pulse)

Total Power Dissipation (2unit)

Channel Temperature

Storage Temperature

Notes 1. PW

excellent switching characteristics, and is suitable for

applications such as power switch of portable machine

and so on.

The PA2451 is a switching device which can be driven

This device features a low on-state resistance and

2.5 V drive available

Low on-state resistance

Built-in G-S protection diode against ESD

DS(on)1

DS(on)2

DS(on)3

DS(on)4

PART NUMBER

2. T

3. T

PA2451TL

G15621EJ1V0DS00 (1st edition)

March 2002 NS CP(K)

= 20 m

= 21 m

= 25 m

= 32 m

this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated

voltage may be applied to this device.

= 25°C Mounted on ceramic board

= 25°C Mounted on FR4 board

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

10 s, Duty Cycle

MAX. (V

N-CHANNEL MOS FIELD EFFECT TRANSISTOR

Note1

= 25°C)

= 0 V)

6PIN HWSON (4521)

= 4.5 V, I

= 4.0 V, I

= 3.1 V, I

= 2.5 V, I

Note2

Note3

PACKAGE

D(pulse)

D(DC)

DSS

GSS

stg

= 4.0 A)

= 25°C)

FOR SWITCHING

DATA SHEET

–55 to +150

±8.2

±12

±80

150

2.5

0.7

MOS FIELD EFFECT TRANSISTOR

°C

Gate1

(0.15)

Gate

Protection

Diode

PACKAGE DRAWING (Unit : mm)

1,2:

Source 1

Gate 1

Drain

Source1

(0.9)

Drain1

EQUIVALENT CIRCUIT

4.4 0.1

5.0 0.1

(3.05)

5,6:

Body

Diode

Source 2

Gate 2

PA2451

Gate2

Gate

Protection

Diode

(0.50)

Source2

2001

Drain2

Body

Diode

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upa2451tl Summary of contents

Page 1

N-CHANNEL MOS FIELD EFFECT TRANSISTOR DESCRIPTION The PA2451 is a switching device which can be driven directly by a 2.5 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such ...

Page 2

ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time ...

Page 3

TYPICAL CHARACTERISTICS (T A DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 Ambient Temperature - ˚C A DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 60 Pulsed 50 V ...

Page 4

DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 70 Pulsed 125˚ 75˚C 25˚C 20 25˚ Drain Current - A D DRAIN TO ...

Page 5

CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000 MHz 1000 100 10 0.01 0 Drain to Source Voltage - V DS SOURCE TO DRAIN DIODE FORWARD VOLTAGE 100 Pulsed ...

Page 6

Data Sheet G15621EJ1V0DS PA2451 ...

Page 7

Data Sheet G15621EJ1V0DS PA2451 7 ...

Page 8

The information in this document is current as of March, 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications ...

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