upg175ta Renesas Electronics Corporation., upg175ta Datasheet

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upg175ta

Manufacturer Part Number
upg175ta
Description
L-band Pa Driver Amplifier
Manufacturer
Renesas Electronics Corporation.
Datasheet
Document No. P13470EJ1V0DS00 (1st edition)
Date Published May 1998 N CP(K)
Printed in Japan
DESCRIPTION
(Personal Digital Cellular in Japan) and another L-band application. The device can operate with 3.0 V, having the
high gain and low distortion.
FEATURES
• Low Operation Voltage: V
• f
• Low distortion: P
• Low operation Current: I
• Variable gain control function:
• 6 pin mini-mold package
APPLICATION
• Digital Cellular: PDC800M, etc.
ORDERING INFORMATION (PLAN)
PG175TA-E3
External input and output matching
External input and output matching
Remark For sample order, please contact your local NEC sales office. (Part number for sample order:
Caution The IC must be handled with care to prevent static discharge because its circuit composed of
PART NUMBER
RF
PG175TA is a GaAs MMIC for PA driver amplifier with variable gain function which was developed for PDC
: 925 to 960 MHz@ P
GaAs HJ-FET.
adj1
6 pin Mini-mold
= –60 dBc typ. @ V
The information in this document is subject to change without notice.
out
DD
PRELIMINARY DATA SHEET
DD1
L-Band PA DRIVER AMPLIFIER
= +9 dBm
= 20 mA typ. @ V
PACKAGE
= V
G = 35 dB typ. @ V
DD2
= 3.0 V
DD
= 3.0 V, P
DD
= 3.0 V, P
Carrier tape width is 8 mm, Quantity is 3 kpcs per reel.
AGC
out
= +9 dBm, V
= 0.5 to 2.5 V
out
GaAs INTEGRATED CIRCUIT
= +9 dBm, V
AGC
= 2.5 V
AGC
PACKING FORM
= 2.5 V
PG175TA
©
PG175TA)
1998

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upg175ta Summary of contents

Page 1

PRELIMINARY DATA SHEET L-Band PA DRIVER AMPLIFIER DESCRIPTION PG175TA is a GaAs MMIC for PA driver amplifier with variable gain function which was developed for PDC (Personal Digital Cellular in Japan) and another L-band application. The device can operate with ...

Page 2

ABSOLUTE MAXIMUM RATINGS (T PARAMETERS SYMBOL Supply Voltage DD1 DD2 AGC Control Voltage V AGC Input Power P in Total Power Dissipation P tot Operating Temperature T A Storage Temperature T stg Note Mounted ...

Page 3

ELECTRICAL CHARACTERISTICS (Unless otherwise specified 25° External input and output matching) PARAMETERS SYMBOL Operating Frequency f Total Current I DD AGC Control Current I AGC Power Gain G p Variable Gain Range G Adjacent Channel Power ...

Page 4

EVALUATION CIRCUIT (Preliminary +3 950 MHz DD1 DD2 L1 IN Using the NEC Evaluation board C1 2.0 pF C2, C3 1000 ...

Page 5

EVALUATION BOARD (Epoxy Glass, = 4.6, 0.4 mm thickness) V DD1 PIN MINI-MOLD PACKAGE DIMENSIONS (UNIT: mm 0.13 +0.1 0.3 –0 ...

Page 6

RECOMMENDED SOLDERING CONDITIONS This Product should be soldered in the following recommended conditions. conditions than the recommended conditions are to be consulted with our sales representatives. Soldering process Infrared ray reflow Package peak temperature: 235° C Hour: within 30 s. ...

Page 7

Preliminary Data Sheet PG175TA 7 ...

Page 8

The Great Care must be taken in dealing with the devices in this guide. The reason is that the material of the devices is GaAs (Gallium Arsenide), which is designated as harmful substance according to the law concerned. Keep the ...

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