si7530dp Vishay, si7530dp Datasheet - Page 2

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si7530dp

Manufacturer Part Number
si7530dp
Description
N- And P-channel 60-v D-s Mosfet
Manufacturer
Vishay
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
si7530dp-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Si7530DP
Vishay Siliconix
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
SPECIFICATIONS T
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Reverse Recovery Energy
b
Parameter
a
a
a
J
= 25 °C, unless otherwise noted
a
Symbol
V
r
I
DS(on)
t
t
I
I
GS(th)
D(on)
V
Q
Q
d(on)
d(off)
GSS
DSS
Q
Q
g
R
t
t
t
SD
rr
fs
gs
gd
r
f
g
rr
g
V
DS
I
V
V
D
V
I
DS
D
DS
DS
≅ –1 A, V
= –30 V, V
≅ 1 A, V
I
I
I
I
F
F
= –60 V, V
V
V
F
F
V
V
V
= 30 V, V
V
= 60 V, V
V
V
V
V
V
V
V
GS
V
I
= 2.7 A, di/dt = 100 A/µs
= 2.7 A, di/dt = 100 A/µs
DS
V
DS
GS
DS
= –5 A, di/dt = 100 A/µs
= –5 A, di/dt = 100 A/µs
DS
I
S
DD
DS
DS
S
GS
DD
New Product
DS
DS
GS
DS
= –2.9 A, V
= 2.7 A, V
= V
= –4.5 V, I
≤ –5 V, V
= –10 V, I
= –15 V, I
= V
= 0 V, V
= –60 V, V
= –30 V, R
= 4.5 V, I
= 60 V, V
≥ 5 V, V
= 30 V, R
= 10 V, I
= 15 V, I
f = 1.0 MHz
N-Channel
N-Channel
P-Channel
GEN
P-Channel
GEN
GS
GS
GS
Test Condition
GS
GS
GS
, I
, I
= –10 V, I
= 10 V, R
= –10 V, R
D
= 10 V, I
= 0 V, T
D
GS
= 0 V, T
GS
GS
D
D
D
D
GS
= –250 µA
D
D
GS
GS
= 250 µA
L
GS
L
= 4.6 A
= –5.0 A
= 4.6 A
= –5.0 A
= ±20 V
= 4.0 A
= –4.5 A
= 10 V
= –10 V
= 30 Ω
= 0 V
= 30 Ω
= 0 V
= 0 V
= 0 V
J
D
G
J
D
= 55°C
G
= 55°C
= 15 A
= –5.0 A
= 6 Ω
= 6 Ω
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min
–25
0.6
3.5
–1
15
1
0.060
0.051
0.080
0.064
–0.85
0.85
Typ
4.5
3.5
1.5
16
12
26
15
65
30
30
40
33
57
6
2
7
7
7
8
8
9
7
S-51566-Rev. C, 07-Nov-05
Document Number: 73249
0.075
0.064
0.100
0.080
±100
±100
Max
–1.2
100
115
1.2
2.5
–3
–1
–5
20
40
11
15
15
15
15
25
20
45
60
80
66
3
1
5
Unit
nC
pC
nA
µA
ns
V
A
S
V

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