si7530dp Vishay, si7530dp Datasheet - Page 4

• Manufacturer Part Number: si7530dp
• Description: N- And P-channel 60-v D-s Mosfet
• Manufacturer: Vishay

Si7530DP
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless noted
www.vishay.com
4
-
-
-
-
-
-
0.6
0.4
0.2
0.0
0.2
0.4
0.6
0.8
1.0
40
10
1
0.0
-
50
-
Source-Drain Diode Forward Voltage
25
0.2
V
SD
0
-
T
0.4
Threshold Voltage
J
T
Source-to-Drain Voltage (V)
-
J
25
= 150
Temperature (
0.6
˚
50
C
I
D
= 250 µA
75
˚
0.8
C)
0.01
100
0.1
100
10
T
1
0.1
J
= 25
1.0
Limited
r
Limited
*V
125
DS(on)
Safe Operating Area, Junction-to-Case
I
D(on)
˚
GS
C
New Product
> minimum V
V
150
1.2
*I
DS
DM
Single Pulse
T
-
Limited
A
= 25
Drain-to-Source Voltage (V)
1
˚
GS
C
at which r
BV
DSS
DS(on)
0.200
0.175
0.150
0.125
0.100
0.075
0.050
0.025
0.000
10
Limited
100
80
60
40
20
0
0.001
is specified
0
On-Resistance vs. Gate-to-Source Voltage
2
100
10 µs
100 µs
1 ms
10 ms
100 ms
1 s
10 s
dc, 100 S
0.01
V
GS
Single Pulse Power
-
Gate-to-Source Voltage (V)
Time (sec)
4
0.1
S-51566-Rev. C, 07-Nov-05
I
D
Document Number: 73249
Single Pulse
= 4.6 A
T
A
6
= 25
˚
C
1
8
10
10