mch3479 Sanyo Semiconductor Corporation, mch3479 Datasheet - Page 2

• Manufacturer Part Number: mch3479
• Description: N-channel Silicon Mosfet
• Manufacturer: Sanyo Semiconductor Corporation

Electrical Characteristics at Ta=25°C
Switching Time Test Circuit
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
P.G
4.5V
0
0V
0
PW=10μs
D.C.≤1%
V IN
0.1
Parameter
0.2
Drain-to-Source Voltage, V DS -- V
V IN
G
50Ω
0.3
I D -- V DS
0.4
V DD =10V
D
0.5
S
I D =1.5A
R L =6.7Ω
0.6
V (BR)DSS
I DSS
I GSS
V GS (off)
| yfs |
R DS (on)1
R DS (on)2
R DS (on)3
Ciss
Coss
Crss
t d (on)
t r
t d (off)
t f
Qg
Qgs
Qgd
V SD
MCH3479
Symbol
0.7
V OUT
0.8
I D =1mA, V GS =0V
V DS =20V, V GS =0V
V GS =±8V, V DS =0V
V DS =10V, I D =1mA
V DS =10V, I D =1.5A
I D =1.5A, V GS =4.5V
I D =1A, V GS =2.5V
I D =0.5A, V GS =1.8V
V DS =10V, f=1MHz
V DS =10V, f=1MHz
V DS =10V, f=1MHz
See specifi ed Test Circuit.
See specifi ed Test Circuit.
See specifi ed Test Circuit.
See specifi ed Test Circuit.
V DS =10V, V GS =4.5V, I D =3.5A
V DS =10V, V GS =4.5V, I D =3.5A
V DS =10V, V GS =4.5V, I D =3.5A
I S =3.5A, V GS =0V
0.9
IT15111
1.0
MCH3479
Conditions
5
4
3
2
1
0
0
V DS =10V
0.2
0.4
Gate-to-Source Voltage, V GS -- V
0.6
min
I D -- V GS
0.8
0.4
20
1.0
Ratings
typ
0.85
260
1.2
2.8
6.2
2.8
0.6
0.9
49
68
99
65
50
19
30
28
1.4
max
±10
1.6
149
1.3
1.2
64
95
No. A1813-2/4
1
1.8
IT15112
Unit
mΩ
mΩ
mΩ
μA
μA
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
S
V
V
V
2.0