cph6414 Sanyo Semiconductor Corporation, cph6414 Datasheet

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cph6414

Manufacturer Part Number
cph6414
Description
N-channel Silicon Mosfet
Manufacturer
Sanyo Semiconductor Corporation
Datasheet

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Ordering number : EN7299A
CPH6414
Features
Specifications
Absolute Maximum Ratings at Ta=25 C
Electrical Characteristics at Ta=25 C
Marking : KQ
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Low ON-resistance.
4V drive.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
Parameter
Parameter
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
SANYO Electric Co.,Ltd. Semiconductor Company
V (BR)DSS
R DS (on)1
R DS (on)2
V GS (off)
Symbol
Symbol
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
V GSS
V DSS
t d (on)
t d (off)
I GSS
I DSS
Coss
Ciss
Crss
Tstg
I DP
Tch
P D
yfs
I D
t r
t f
I D =1mA, V GS =0V
V DS =30V, V GS =0V
V GS = 16V, V DS =0V
V DS =10V, I D =1mA
V DS =10V, I D =3A
I D =3A, V GS =10V
I D =1.5A, V GS =4V
V DS =10V, f=1MHz
V DS =10V, f=1MHz
V DS =10V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
PW 10 s, duty cycle 1%
Mounted on a ceramic board (1200mm
CPH6414
Conditions
O2505PE MS IM TB-00001870 / 83002 TS IM TA-100191
Conditions
2
0.8mm)
min
1.2
3.1
30
Ratings
typ
Ratings
460
4.5
37
63
95
75
11
12
31
18
Continued on next page.
--55 to +150
max
150
1.6
2.6
30
20
20
10
48
88
5
1
No.7299-1/4
Unit
Unit
m
m
pF
pF
pF
ns
ns
ns
ns
W
V
V
A
A
V
V
S
C
C
A
A

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cph6414 Summary of contents

Page 1

... SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN CPH6414 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Symbol ...

Page 2

... IT05169 100 Ta= =3. =1. IT05171 Ratings min typ max 8.5 1.8 1.3 0. =15V OUT G CPH6414 =10V 0.5 1.0 1.5 2.0 2.5 3.0 Gate-to-Source Voltage (on --60 --40 -- ...

Page 3

... Drain Current =10V Total Gate Charge 2.0 1.6 1.5 1.0 0 100 Ambient Temperature CPH6414 0.001 0.2 1.0 IT05173 1000 ...

Page 4

... Note on usage : Since the CPH6414 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’ ...

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