cph6604 Sanyo Semiconductor Corporation, cph6604 Datasheet

cph6604

Manufacturer Part Number

cph6604

Description

N-channel Silicon Mosfet

Manufacturer

Sanyo Semiconductor Corporation

Datasheet

1.CPH6604.pdf (4 pages)

Current page: 1 of 4
Download datasheet (32Kb)

Ordering number : ENN7147

Features

Specifications

Absolute Maximum Ratings at Ta=25 C

Electrical Characteristics at Ta=25 C

Marking : FP

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Drain Current (Pulse)

Allowable Power Dissipation

Channel Temperature

Storage Temperature

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

Forward Transfer Admittance

Static Drain-to-Source On-State Resistance

•

Low ON-resistance.

Ultrahigh-speed switching.

4V drive.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

Parameter

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

SANYO Electric Co.,Ltd. Semiconductor Company

V (BR)DSS

R DS (on)1

R DS (on)2

V GS (off)

Symbol

V GSS

V DSS

I GSS

I DSS

Tstg

I DP

Tch

P D

yfs

I D

Ultrahigh-Speed Switching Applications

PW 10 s, duty cycle 1%

Mounted on a ceramic board (900mm

I D =1mA, V GS =0

V DS =30V, V GS =0

V GS = 16V, V DS =0

V DS =10V, I D =1mA

V DS =10V, I D =1A

I D =1A, V GS =10V

I D =0.5A, V GS =4V

CPH6604

Conditions

Package Dimensions

unit : mm

2202

Conditions

2.9

0.8mm)1unit

0.95

0.4

[CPH6604]

min

N-Channel Silicon MOSFET

1.2

1.3

11502 TS IM TA-3454

Ratings

0.15

1 : Source1

2 : Gate1

3 : Drain2

4 : Source2

5 : Gate2

6 : Drain1

SANYO : CPH6

typ

Ratings

190

115

1.8

CPH6604

--55 to +150

Continued on next page.

0.05

max

150

2.0

8.0

0.9

150

270

2.6

No.7147-1/4

Unit

Related parts for cph6604

cph6604 Summary of contents

Page 1

... I D =1mA DSS V DS =30V GSS 16V (off =10V =1mA yfs V DS =10V = (on =1A =10V R DS (on =0.5A =4V N-Channel Silicon MOSFET CPH6604 [CPH6604] 0. Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 0 ...

Page 2

... IT02700 Ratings min typ max 120 3.6 0.6 0.5 0. =15V OUT G CPH6604 =10V 0 0 0.5 1.0 1.5 2.0 2.5 3.0 Gate-to-Source Voltage (on --60 --40 -- 100 Ambient Temperature Unit ...

Page 3

... Drain Current =10V 0.5 1.0 1.5 2.0 2.5 3.0 Total Gate Charge 1.0 0.9 0.8 0.6 0.4 0 100 Amibient Tamperature CPH6604 =10V IT04063 1000 V DD =15V =10V 100 7 ...

Page 4

... SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of January, 2002. Specifications and information herein are subject to change without notice. CPH6604 PS No.7147-4/4 ...

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