cph6221 Sanyo Semiconductor Corporation, cph6221 Datasheet

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cph6221

Manufacturer Part Number
cph6221
Description
Npn Epitaxial Planar Silicon Transistor
Manufacturer
Sanyo Semiconductor Corporation
Datasheet
Ordering number : ENN7387
Applications
Features
Specifications
Absolute Maximum Ratings at Ta=25 C
Electrical Characteristics at Ta=25 C
Marking : CV
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Relay drivers, lamp drivers, motor drivers, strobe.
Adoption of MBIT process.
High current capacitance.
Low collector-to-emitter saturation voltage.
High-speed switching.
Ultrasmall package facilitates miniaturization
in end products (mounting height : 0.9mm).
High allowable power dissipation.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
Parameter
Parameter
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
SANYO Electric Co.,Ltd. Semiconductor Company
Symbol
Symbol
V CBO
V CEO
V EBO
I CBO
I EBO
Tstg
h FE
Cob
I CP
P C
I C
I B
Tj
f T
Mounted on a ceramic board (600mm
V CB =12V, I E =0
V EB =4V, I C =0
V CE =2V, I C =500mA
V CE =2V, I C =500mA
V CB =10V, f=1MHz
CPH6221
DC / DC Converter Applications
Conditions
Package Dimensions
unit : mm
2146A
Conditions
1
6
NPN Epitaxial Planar Silicon Transistor
2
2
2.9
5
0.95
0.8mm)
3
4
0.4
[CPH6221]
min
200
22503 TS IM TA-3810
Ratings
0.15
1 : Collector
2 : Collector
3 : Base
4 : Emitter
5 : Collector
6 : Collector
SANYO : CPH6
typ
Ratings
350
23
CPH6221
Continued on next page.
--55 to +150
0.05
max
600
150
560
1.3
0.1
0.1
15
15
5
3
5
No.7387-1/4
MHz
Unit
Unit
mA
pF
W
V
V
V
A
A
C
C
A
A

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cph6221 Summary of contents

Page 1

... Mounted on a ceramic board (600mm Tj Tstg Symbol Conditions I CBO V CB =12V EBO V EB =4V =2V =500mA =2V =500mA Cob V CB =10V, f=1MHz NPN Epitaxial Planar Silicon Transistor CPH6221 [CPH6221] 0. Collector 2 : Collector 3 : Base 4 : Emitter 0 Collector ...

Page 2

... Collector-to-Emitter Voltage 3.0 2.5 2.0 1.5 1.0 0 0.2 0.4 0.6 Base-to-Emitter Voltage CPH6221 Symbol Conditions V CE (sat =1.5A =30mA V BE (sat =1.5A =30mA V (BR)CBO (BR)CEO I C =1mA (BR)EBO See specified Test Circuit. ...

Page 3

... Collector Current 1.4 1.3 1.2 1.0 0.8 0.6 0.4 0 100 Ambient Temperature CPH6221 100 1.0 1.0 IT04591 = 100 0.01 IT04595 =50 ...

Page 4

... SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of February, 2003. Specifications and information herein are subject to change without notice. CPH6221 PS No.7387-4/4 ...

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