MBR1100-M3 VISHAY [Vishay Siliconix], MBR1100-M3 Datasheet - Page 2
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MBR1100-M3
Manufacturer Part Number
MBR1100-M3
Description
Schottky Rectifier, 1 A
Manufacturer
VISHAY [Vishay Siliconix]
Datasheet
1.MBR1100-M3.pdf
(6 pages)
Note
(1)
Notes
(1)
(2)
Revision: 21-Sep-11
ELECTRICAL SPECIFICATIONS
PARAMETER
Maximum forward voltage drop
See fig. 1
Maximum reverse leakage current
See fig. 2
Typical junction capacitance
Typical series inductance
Maximum voltage rate of change
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to lead
Approximate weight
Marking device
Pulse width < 300 μs, duty cycle < 2 %
Mounted 1" square PCB, thermal probe connected to lead 2 mm from package
dP
------------ -
dT
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
tot
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
J
<
------------- -
R
thJA
1
www.vishay.com
thermal runaway condition for a diode on its own heatsink
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
T
SYMBOL
SYMBOL
R
J
V
I
dV/dt
RM
(1)
thJL
FM
C
L
, T
S
T
(1)
(1)
(2)
Stg
1 A
2 A
1 A
2 A
T
T
V
Measured lead to lead 5 mm from package body
Rated V
DC operation
See fig. 4
Case style DO-204AL (DO-41) (JEDEC)
J
J
R
= 25 °C
= 125 °C
= 5 V
R
DC
, (test signal range 100 kHz to 1 MHz) 25 °C
2
TEST CONDITIONS
TEST CONDITIONS
VS-MBR1100, VS-MBR1100-M3
T
T
V
J
J
R
www.vishay.com/doc?91000
= 25 °C
= 125 °C
= Rated V
R
Vishay Semiconductors
DiodesEurope@vishay.com
- 40 to 150
VALUES
VALUES
10 000
Document Number: 93438
0.012
0.85
0.96
0.68
0.78
0.33
0.5
1.0
8.0
35
80
MBR1100
UNITS
UNITS
°C/W
V/µs
mA
nH
oz.
pF
°C
V
g