MBR10100-M3/4W VISHAY [Vishay Siliconix], MBR10100-M3/4W Datasheet - Page 3
MBR10100-M3/4W
Manufacturer Part Number
MBR10100-M3/4W
Description
High-Voltage Schottky Rectifier
Manufacturer
VISHAY [Vishay Siliconix]
Datasheet
1.MBR10100-M34W.pdf
(4 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MBR10100-M3/4W
Manufacturer:
VISHAY/威世
Quantity:
20 000
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 89193
Revision: 30-Nov-10
0.001
Figure 3. Typical Instantaneous Forward Characteristics
0.01
0.01
100
100
0.1
0.1
10
10
1
1
10
0
Figure 4. Typical Reverse Characteristics
Percent of Rated Peak Reverse Voltage (%)
0.1
T
20
J
= 125 °C
Instantaneous Forward Voltage (V)
0.2
30
0.3
40
T
T
J
0.4
J
= 150 °C
= 25 °C
50
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
0.5
T
T
T
For technical questions within your region, please contact one of the following:
0.140 (3.56)
J
0.160 (4.06)
J
J
60
= 150 °C
= 125 °C
= 25 °C
0.095 (2.41)
0.105 (2.67)
0.6
0.057 (1.45)
0.045 (1.14)
70
0.7
80
0.8
0.415 (10.54)MAX.
1
0.370 (9.40)
0.360 (9.14)
90
0.9
PIN
100
1.0
2
0.037 (0.94)
0.027 (0.68)
0.205 (5.20)
0.195 (4.95)
PIN 1
PIN 2
0.635 (16.13)
0.625 (15.87)
0.103 (2.62)
0.113 (2.87)
TO-220AC
0.154 (3.91)
0.148 (3.74)
DIA.
CASE
1.148 (29.16)
1.118 (28.40)
10 000
0.145 (3.68)
0.135 (3.43)
0.350 (8.89)
0.330 (8.38)
1000
0.022 (0.56)
0.014 (0.36)
100
100
0.1
10
0.560 (14.22)
10
0.530 (13.46)
1
0.01
Figure 6. Typical Transient Thermal Impedance
1
DiodesEurope@vishay.com
Vishay General Semiconductor
Figure 5. Typical Junction Capacitance
0.1
MBR1090, MBR10100
0.185 (4.70)
0.175 (4.44)
0.603 (15.32)
0.055 (1.39)
0.045 (1.14)
0.573 (14.55)
0.110 (2.79)
t - Pulse Duration (s)
0.100 (2.54)
Reverse Voltage (V)
10
1
Junction to Case
T
f = 1.0 MHz
V
J
sig
10
= 25 °C
= 50 mVp-p
MBR
www.vishay.com
100
100
3