CM900DUC-24S MITSUBISHI [Mitsubishi Electric Semiconductor], CM900DUC-24S Datasheet - Page 4

• Manufacturer Part Number: CM900DUC-24S
• Description: HIGH POWER SWITCHING USE INSULATED TYPE
• Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]

< IGBT MODULES >
CM900DUC-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
TEST CIRCUIT
July-2012
RECOMMENDED OPERATING CONDITIONS
CHIP LOCATION (Top view)
R
V
V
G
GEon
C C
V
Symbol
circuited
GE
V
Short-
=15V
Cs2
Es2
Cs1
G1
Es1
G2
External gate resistance
Tr1
(DC) Supply voltage
Gate (-emitter drive) voltage
C2E1
C1
E2
V
C E s a t
I
C
test circuit
Item
V
circuited
GE
V
Short-
=15V
Cs2
Es2
Cs1
G1
Es1
G2
Tr2
C2E1
C1
Per switch
E2
Applied across P-N terminals
Applied across G-Es terminals
Tr1/Tr2: IGBT, Di1/Di2: FWDi
I
C
4
Conditions
circuited
circuited
V
Short-
Short-
Cs2
Es2
Cs1
G1
Es1
G2
Di1
C2E1
C1
E2
V
EC
I
test circuit
E
Dimension in mm, tolerance: ±1 mm
13.5
Min.
0
-
circuited
circuited
V
Short-
Short-
Limits
Typ.
15.0
600
-
Cs2
Es2
Cs1
G1
Es1
G2
TENTATIVE
Di2
Max.
C2E1
16.5
850
3.6
C1
E2
Unit
Ω
V
V
I
E