CM900DUC-24S MITSUBISHI [Mitsubishi Electric Semiconductor], CM900DUC-24S Datasheet - Page 7

• Manufacturer Part Number: CM900DUC-24S
• Description: HIGH POWER SWITCHING USE INSULATED TYPE
• Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]

< IGBT MODULES >
CM900DUC-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
July-2012
PERFORMANCE CURVES
1000
1000
100
100
10
10
100
100
V
CC
=600 V, V
---------------: T
---------------: T
SWITCHING CHARACTERISTICS
SWITCHING CHARACTERISTICS
COLLECTOR CURRENT I
COLLECTOR CURRENT I
INDUCTIVE LOAD, PER PULSE
V
EMITTER CURRENT I
CC
GE
=600 V, V
=±15 V, R
j
j
=150 °C, - - - - -: T
=150 °C, - - - - -: T
HALF-BRIDGE
HALF-BRIDGE
(TYPICAL)
(TYPICAL)
GE
G
=±15 V, R
=0 Ω, INDUCTIVE LOAD
G
E
j
j
=0 Ω,
=125 °C
=125 °C
(A)
C
C
t
t
t
t
(A)
(A)
d ( o n )
r
d ( o f f )
f
E
E
E
o n
o f f
r r
1000
1000
10000
1000
100
100
10
1
7
1000
100
10
1000
0.1
100
10
V
CC
0.1
=600 V, I
EXTERNAL GATE RESISTANCE R
EXTERNAL GATE RESISTANCE R
---------------: T
---------------: T
SWITCHING CHARACTERISTICS
SWITCHING CHARACTERISTICS
V
INDUCTIVE LOAD, PER PULSE
CC
C
E
E
=600 V, I
=900 A, V
o f f
o n
j
=150 °C, - - - - -: T
j
HALF-BRIDGE
=150 °C, - - - - -: T
HALF-BRIDGE
(TYPICAL)
(TYPICAL)
C
/I
GE
E
=900 A, V
=±15 V, INDUCTIVE LOAD
1
1
GE
j
=±15 V,
=125 °C
j
=125 °C
TENTATIVE
G
t
t
t
t
f
G
d ( o n )
r
d ( o f f )
(Ω)
(Ω)
E
r r
10
10000
1000
100
10