BR25H010-W ROHM [Rohm], BR25H010-W Datasheet - Page 2

• Manufacturer Part Number: BR25H010-W
• Manufacturer: ROHM [Rohm]

●Absolute maximum ratings (Ta=25°C)
●Memory cell characteristics (Vcc=2.5V～5.5V)
●Electrical characteristics (Unless otherwise specified, Ta=-40~+125°C, Vcc=2.5~5.5V)
●Block diagram
Impressed voltage
Permissible
dissipation
Storage
temperature range
Operating
temperature range
Terminal voltage
Number of data
rewrite times
Data hold years
“H” input voltage
“L” output voltage
“L” output voltage
“H” output voltage
Input leak current
Output lead current
Current consumption at write
action
Current consumption at read
action
Standby current
・When using at Ta=25℃ or higher, 3.6mW (*1,*2) to be reduced per 1℃
Parameter
Parameter
Parameter
ж1
ж1
Symbol
1,000,000
500,000
300,000
Topr
Tstg
Vcc
Pd
Min
HOLDB
40
20
–
WPB
SCK
CSB
SO
SI
Limits
450(SOP8)
450(SOP-J8)
-0.3~Vcc+0.3
Typ.
Symbol
VOH
-
-
-
-
-
VOL
VIH
ILO
I
I
I
I
VIL
ISB
ILI
CC
CC
CC
CC
-0.3~+6.5
-65~150
-40~125
1
2
3
4
INSTRUCTION DECODE
CONTROL CLOCK
GENERATION
Limits
Max
-
-
-
-
-
INSTRUCTION
REGISTER
Min.
0.7x
Vcc
-0.3
Vcc
-0.5
-10
-10
0
–
–
–
–
–
Times
Times
Times
Years
Years
Unit
ж
1:Not 100% TESTED
*1
*2
Fig.1 Block diagram
Limits
Typ.
–
–
–
–
–
–
–
–
–
–
–
Condition
Ta
Ta
mW
ADDRESS
REGISTER
DATA
REGISTER
Unit
Ta
Ta
Ta
°C
°C
V
V
≤
≤
≤
≤
≤
Max.
+0.3
0.3x
Vcc
Vcc
Vcc
WRITE
INHIBITION
105℃
125℃
0.4
2.0
3.0
1.5
2.0
85℃
25°C
85°C
10
10
10
VOLTAGE
DETECTION
7～12bit *1
8bit
Unit
mA
mA
mA
mA
2/16
μA
μA
μA
V
V
V
V
●Recommended action conditions
●Input / output capacity (Ta=25°C, frequency=5MHz)
READ/WRITE
ADDRESS
DECODER
Input capacity
Output capacity
2.5≤Vcc≤5.5V
2.5≤Vcc≤5.5V
IOL=2.1mA
IOH=-0.4mA
V
V
Vcc=2.5V,fSCK=5MHz, tE/W=5ms
VIH/VIL=0.9Vcc/0.1Vcc,
Byte write, Page write
Write status regisuter
Vcc=5.5V,fSCK=5MHz, tE/W=5ms
VIH/VIL=0.9Vcc/0.1Vcc
Byte write, Page write
Write status register
Vcc=2.5V,fSCK=5MHz
VIH/VIL=0.9Vcc/0.1Vcc,
Read, Read status register
Vcc=5.5V,fSCK=5MHz
VIH/VIL=0.9Vcc/0.1Vcc
Read, Read status register
Vcc=5.5V
CSB=HOLDB=WPB=Vcc, SCK=SI=Vcc or =GND, SO=OPEN
AMP
HIGH VOLTAGE
GENERATOR
Power source voltage
Input voltage
IN
OUT
Parameter
=0~Vcc
=0~Vcc, CSB=Vcc
7～12bit *1
Parameter
8bit
STATUS REGISTER
ж
ж
1
1
EEPROM
1～32K
Symbol
C
C
OUT
IN
Conditions
*1 7bit: BR25H010-W
Symbol
10bit: BR25H080-W
11bit: BR25H160-W
12bit: BR25H320-W
Conditions
V
V
8bit: BR25H020-W
9bit: BR25H040-W
Vcc
Vin
OUT
IN
・Radiation resistance design is not made
=GND
=GND
2.5
0~Vcc
Limits
Min.
–
–
~
5.5
*1: Not 100% TESTED
Max.
8
8
Unit
V
Unit
pF