rf2369 RF Micro Devices, rf2369 Datasheet - Page 2

• Manufacturer Part Number: rf2369
• Description: 3v Low Noise Amplifier/ 3v Pa Driver Amplifier
• Manufacturer: RF Micro Devices

4
4-184
Absolute Maximum Ratings
Supply Voltage
Input RF Level
Operating Ambient Temperature
Storage Temperature
Overall
Frequency Range
Cellular Low Noise
Amplifier
Frequency
HIGH GAIN MODE
Gain
Noise Figure
Input IP3
Input VSWR
Output VSWR
Current Drain
BYPASS MODE
Gain
Input IP3
Input VSWR
Output VSWR
Current Drain
Cellular CDMA Driver
Frequency
HIGH GAIN MODE
Gain
Noise Figure
Output Power
ACPR1
ACPR2
Input VSWR
Output VSWR
Current Drain
BYPASS MODE
Gain
Input IP3
Input VSWR
Output VSWR
Current Drain
Power Supply
Voltage (V
V
V
Power Down
SELECT
SELECT
RF2369
Low
High
Parameter
Parameter
CC
)
Min.
14.0
14.0
150
869
+10
824
-3.0
+10
9.0
1.8
-3
4
0
-0.5 to +8.0
-40 to +150
-40 to +85
Rating
Specification
+10
824 to 894
Typ.
15.5
11.5
15.5
+24
-2.0
+24
1.6
7.5
2.0
2.0
-65
-70
8.5
2.0
-2
3
Max.
Unit
2500
dBm
17.0
10.0
17.0
V
894
849
-1.0
2.0
2:1
2:1
2:1
2:1
4.0
2.5
2:1
2:1
2:1
2:1
4.0
0.8
10
°C
°C
-1
DC
dBc/30kHz
dBc/30kHz
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
Unit
MHz
MHz
dBm
dBm
MHz
dBm
dBm
mA
mA
mA
mA
dB
dB
dB
dB
dB
dB
V
V
V
A
T
Gain Select<0.8V, V
Gain Select>1.8V, V
Gain Select<0.8V, V
P
P
Gain Select>1.8V, V
High Gain mode.
Select<0.8V, V
Low Gain mode.
Select>1.8V, V
Gain Select<0.8V, V
Caution! ESD sensitive device.
AMB
OUT
OUT
=25° C, V
=+4dBm, +885kHz offset
=+4dBm, +1.98MHz offset
CC
PD
PD
Condition
=3.0V
/V
/V
Preliminary
REF
REF
PD
PD
PD
PD
PD
/V
/V
/V
/V
/V
=3V
=0V
REF
REF
REF
REF
REF
Rev A3 010720
=3V
=0V
=3V
=0V
=0V, V
CC
=0V