RF2131 RF Micro Devices, RF2131 Datasheet

no-image

RF2131

Manufacturer Part Number
RF2131
Description
Manufacturer
RF Micro Devices
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
RF2131TR7
Manufacturer:
RFMD
Quantity:
8 000
Product Description
The RF2131 is a high-power, high-efficiency amplifier IC.
The device is manufactured on an advanced Gallium Ars-
enide Heterojunction Bipolar Transistor (HBT) process,
and has been designed for use as the final RF amplifier in
AMPS and ETACS handheld equipment, spread spec-
trum systems, CDPD, and other applications in the
800MHz to 950MHz band. On-board power control pro-
vides over 30dB of control range with an analog voltage
input, and provides power down with a logic "low" for
standby operation. Although it is intended for class C
operation, linear class AB operation can be achieved by
raising the bias level. The device is self-contained with
50
optimum power and efficiency characteristics.
Optimum Technology Matching® Applied
Rev B4 010417
Typical Applicat ions
• AMPS/ETACS Cellular Handsets
• CDPD Portable Data Cards
• 900MHz ISM Band Equipment
Si BJT
Si Bi-CMOS
input and the output can be easily matched to obtain
GND1
VCC2
VCC1
RF IN
GND
GND
PC
NC
Funct ional Block Diagram
1
2
3
4
5
6
7
8
ü
GaAs HBT
SiGe HBT
BIAS
2
GaAs MESFET
Si CMOS
16
15
14
13
12
11
10
9
NC
RF OUT
RF OUT
GND
GND
RF OUT
RF OUT
NC
HIGH EFFICIENCY AMPS/ETACS AMPLIFIER
• Commercial and Consumer Systems
• Portable Battery-Powered Equipment
Feat ures
Ordering Infor mat ion
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
• Single 4.0V to 7.0V Supply
• 1.2W Output Power
• 25dB Gain With Analog Gain Control
• 64% Efficiency
• Digitally Controlled Power Down Mode
• 800MHz to 950MHz Operation
RF2131
RF2131 PCBA
Package Style: Standard Bat wing
8° MAX
0° MIN
0.392
0.386
xxx
xxx
High Efficiency AMPS/ETACS Amplifier
Fully Assembled Evaluation Board
0.035
0.016
0.158
0.150
0.244
0.230
0.010
0.008
0.021
0.014
0.069
0.064
0.060
0.054
RF2131
http://www.rfmd.com
Fax (336) 664 0454
Tel (336) 664 1233
-A-
0.009
0.004
0.050
2-99
2

RF2131 Summary of contents

Page 1

... AMPS/ETACS Cellular Handsets • CDPD Portable Data Cards • 900MHz ISM Band Equipment Product Description The RF2131 is a high-power, high-efficiency amplifier IC. The device is manufactured on an advanced Gallium Ars- enide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in ...

Page 2

... RF2131 Absolute Maximum Ratings Parameter Supply Voltage Power Control Voltage ( Supply Current Input RF Power 2 Output Load VSWR Operating Case Temperature Ambient Operating Temperature Storage Temperature Parameter Overall Operating Frequency Range Usable Frequency Range Maximum CW Output Power Total CW Efficiency DC Current at 1.2W Output Input Power for 1 ...

Page 3

... Same as pin 10 This pin is not connected internally, however it needs to be connected to ground externally. This will improve performance by reducing cou- pling between pins. Rev B4 010417 input, but the actual impedance depends on the RF2131 Interface Schematic VCC1 PC To Bias Stages 80 2 VCC2 ...

Page 4

... RF2131 Theory of Operat ion and Applicat ion Infor mat ion The RF2131 is a two-stage device with 25dB gain at full power. Therefore, for +31dBm output power, the drive required to fully saturate the output is +6dBm. Based upon HBT (Heterojunction Bipolar Transistor) 2 technology, the part requires only a single positive 4 ...

Page 5

... High current conditions are also potentially dangerous to any RF device. High currents lead to high channel temperatures and may force early failures. The RF2131 includes temperature compensation circuits in the bias network to stabilize the RF transistors, thus limiting the current through the amplifier and protecting the devices from damage ...

Page 6

... RF2131 Optimized for Efficiency at 4.8V VPC 100 100 100 pF This schematic defines the optimum configuration for maximum efficiency at 4.8V. Under these conditions, as can be seen in the data plots, the power drops at 4.0V. Over 70% power-added efficiency can be achieved at +30.8dBm with 4.8V and +8dBm input level with this implementation. ...

Page 7

... This implementation is recommended for some additional margin on output power. Rev B4 010417 V CC 100 nF 100 BIAS RF2131 2 100 pF 0.140" RF OUT 6.2 pF 2-105 ...

Page 8

... RF2131 2 VPC C10 C11 10 nF 100 nF VCC C12 100 pF 50 strip VCC C13 100 pF 2-106 Evaluat ion Board Schemat ic (Download Bill of Materials from www.rfmd.com.) 2131400A BIAS VCC ...

Page 9

... Evaluat ion Board Layout Rev B4 010417 3” x 2” RF2131 2 2-107 ...

Page 10

... RF2131 2 2-108 Rev B4 010417 ...

Related keywords