RF2132 RF Micro Devices, RF2132 Datasheet

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RF2132

Manufacturer Part Number
RF2132
Description
Manufacturer
RF Micro Devices
Datasheet

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Product Description
The RF2132 is a high power, high efficiency linear ampli-
fier IC. The device is manufactured on an advanced Gal-
lium Arsenide Heterojunction Bipolar Transistor (HBT)
process, and has been designed for use as the final RF
amplifier in dual-mode 4-cell CDMA/AMPS handheld digi-
tal cellular equipment, spread-spectrum systems, and
other applications in the 800MHz to 950MHz band. The
device is self-contained with 50Ω input and the output
can be easily matched to obtain optimum power, effi-
ciency, and linearity characteristics over varying supply
and control voltages.
Optimum Technology Matching® Applied
Rev B10 060908
Typical Applications
• 4.8V AMPS Cellular Handsets
• 4.8V CDMA/AMPS Handsets
• 4.8V JCDMA/TACS Handsets
Si BJT
Si Bi-CMOS
InGaP/HBT
RF IN
GND
GND
GND
GND
VCC
NC
PC
Functional Block Diagram
1
2
3
4
5
6
7
8
RoHS Compliant & Pb-Free Product
GaAs HBT
SiGe HBT
GaN HEMT
BIAS
0
GaAs MESFET
Si CMOS
SiGe Bi-CMOS
16
15
14
13
12
11
10
9
GND
RF OUT
RF OUT
GND
GND
RF OUT
RF OUT
GND
• Driver Amplifier in Cellular Base Stations
• Portable Battery-Powered Equipment
Features
Ordering Information
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
• Single 4.2V to 5.0V Supply
• Up to 29 dBm Linear Output Power
• 29dB Gain With Analog Gain Control
• 45% Linear Efficiency
• On-board Power Down Mode
• 800MHz to 950MHz Operation
RF2132
RF2132PCBA-41X Fully Assembled Evaluation Board
Package Style: Standard Batwing
8° MAX
0° MIN
0.392
0.386
Linear Power Amplifier
0.035
0.016
0.158
0.150
0.244
0.230
LINEAR POWER AMPLIFIER
0.010
0.008
0.021
0.014
0.069
0.064
0.060
0.054
RF2132
http://www.rfmd.com
Fax (336) 664 0454
Tel (336) 664 1233
-A-
0.009
0.004
0.050
2-109

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RF2132 Summary of contents

Page 1

... AMPS Cellular Handsets • 4.8V CDMA/AMPS Handsets • 4.8V JCDMA/TACS Handsets Product Description The RF2132 is a high power, high efficiency linear ampli- fier IC. The device is manufactured on an advanced Gal- lium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF ...

Page 2

... RF2132 Absolute Maximum Ratings Parameter Supply Voltage (No RF) Supply Voltage (P <32dBm) OUT Power Control Voltage ( Supply Current Input RF Power Output Load VSWR Storage Temperature Junction Temperature Parameter Min. Overall Usable Frequency Range Linear Gain Total Linear Efficiency Efficiency at Max Output ...

Page 3

... Same as pin 10. 16 GND Same as pin 4. Rev B10 060908 , with a decoupling capacitor on the V CC for +31dBm RF output power. The maximum power that CC , whichever is the lowest. CC RF2132 Interface Schematic side. The value From Bias Stages See pin OUT From Bias Stages See pin 10 ...

Page 4

... RF2132 Vcc = 4.8 V Vpc = 4.0 V 100 pF 100 Ω Evaluation Board Schematic (Download Bill of Materials from www.rfmd.com.) P1-1 L1 1.8 nH Interstage tuning (L1) for centering output frequency C6 100 Adds bias to the first Ω amplifier stage for improved linearity P1-3 C12 ...

Page 5

... Rev B10 060908 Evaluation Board Layout 2” x 2” RF2132 2-113 ...

Page 6

... RF2132 Vcc = 4.8 V, Vpc = 4.0 V, Frequency = 836 MHz, IS-95A CDMA 2-114 RF2132 Evaluation Board ACPR 1.98 MHz ACPR 885 kHz Current Total Efficiency Pout (dBm Rev B10 060908 350 300 250 200 150 100 ...

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