upa854td Renesas Electronics Corporation., upa854td Datasheet - Page 2

• Manufacturer Part Number: upa854td
• Description: Npn Silicon Rf Twin Transistor
• Manufacturer: Renesas Electronics Corporation.

ABSOLUTE MAXIMUM RATINGS (T
ELECTRICAL CHARACTERISTICS (T
(1) Q1
(2) Q2
2
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Gain Bandwidth Product
Insertion Power Gain
Noise Figure
Reverse Transfer Capacitance
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Gain Bandwidth Product
Insertion Power Gain
Noise Figure
Reverse Transfer Capacitance
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Note Mounted on 1.08 cm
Notes 1. Pulse measurement: PW
2. Collector to base capacitance when the emitter grounded
Parameter
Parameter
Parameter
2
1.0 mm (t) glass epoxy PCB
Symbol
Symbol
h
h
Symbol
C
C
P
FE
S
FE
S
V
V
V
I
I
I
I
re
re
NF
NF
T
CBO
EBO
CBO
EBO
tot
f
f
21e
21e
I
T
CBO
CEO
EBO
T
Note 2
T
Note 2
stg
Note 1
Note 1
C
350 s, Duty Cycle
Note
j
2
2
A
A
= +25 C)
V
V
V
V
V
V
Z
V
V
V
V
V
V
V
Z
V
= +25 C)
Data Sheet PU10010EJ01V0DS
S
S
CB
EB
CE
CE
CE
CE
CB
CB
EB
CE
CE
CE
CE
CB
= Z
= Z
= 5 V, I
= 1 V, I
= 3 V, I
= 3 V, I
= 3 V, I
= 3 V, I
= 3 V, I
= 5 V, I
= 1 V, I
= 1 V, I
= 1 V, I
= 1 V, I
= 1 V, I
= 0.5 V, I
180
Q1
30
210 in 2 elements
9
6
2
opt
opt
65 to +150
Ratings
Test Conditions
C
Test Conditions
C
E
C
C
C
C
E
E
C
C
C
C
150
= 0 mA
= 0 mA
= 10 mA
= 10 mA, f = 2 GHz
= 10 mA, f = 2 GHz
= 3 mA, f = 2 GHz,
= 0 mA, f = 1 MHz
= 0 mA
= 0 mA
= 10 mA
= 10 mA, f = 2 GHz
= 10 mA, f = 2 GHz
= 10 mA, f = 2 GHz,
E
= 0 mA, f = 1 MHz
2%
100
190
5.5
1.5
Q2
15
Unit
mW
mA
V
V
V
C
C
MIN.
MIN.
10.0
0.65
100
7.0
4.0
3.0
75
TYP.
TYP.
12.0
0.75
110
8.5
1.5
0.4
5.5
4.5
2.0
MAX.
MAX.
0.85
100
100
150
100
100
145
2.5
0.7
3.0
PA854TD
GHz
GHz
Unit
Unit
nA
nA
dB
dB
pF
nA
nA
dB
dB
pF