SB1H100HE3/73 VISHAY [Vishay Siliconix], SB1H100HE3/73 Datasheet - Page 3

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SB1H100HE3/73

Manufacturer Part Number
SB1H100HE3/73
Description
High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance
Manufacturer
VISHAY [Vishay Siliconix]
Datasheet
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88716
Revision: 19-May-08
10 000
10 000
1000
1000
0.01
100
100
0.1
10
10
1
0.1
20
Figure 3. Typical Reverse Characteristics
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Junction Capacitance
T
J
= 150 °C
40
T
J
= 100 °C
T
Reverse Voltage (V)
J
1
= 125 °C
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
For technical questions within your region, please contact one of the following:
60
T
J
= 25 °C
10
80
100
100
0.107 (2.7)
0.080 (2.0)
0.034 (0.86)
0.028 (0.71)
DIA.
DIA.
DO-204AL (DO-41)
0.205 (5.2)
0.160 (4.1)
1.0 (25.4)
1.0 (25.4)
MIN.
MIN.
100
0.1
10
1
0.01
Figure 5. Typical Transient Thermal Impedance
Vishay General Semiconductor
t - Pulse Duration (s)
SB1H90 & SB1H100
0.1
1
www.vishay.com
10
3

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