SST25VF010-20-4C-QA-DD029 SST [Silicon Storage Technology, Inc], SST25VF010-20-4C-QA-DD029 Datasheet - Page 15

• Manufacturer Part Number: SST25VF010-20-4C-QA-DD029
• Description: 1 Mbit SPI Serial Flash
• Manufacturer: SST [Silicon Storage Technology, Inc]

1 Mbit SPI Serial Flash
SST25VF010
ELECTRICAL SPECIFICATIONS
Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute Maximum
Stress Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation
of the device at these conditions or conditions greater than those defined in the operational sections of this data
sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.)
Temperature Under Bias . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55°C to +125°C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +150°C
D. C. Voltage on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to V
Transient Voltage (<20 ns) on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -2.0V to V
Package Power Dissipation Capability (Ta = 25°C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W
Surface Mount Lead Soldering Temperature (3 Seconds) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 240°C
Output Short Circuit Current
O
TABLE 7: DC O
TABLE 8: R
TABLE 9: C
©2003 Silicon Storage Technology, Inc.
Range
Commercial
Symbol
I
I
I
I
I
V
V
V
V
Symbol
T
T
Parameter
C
C
DDR
DDW
SB
LI
LO
PERATING
PU-READ
PU-WRITE
IL
IH
OL
OH
OUT
IN
1. Output shorted for no more than one second. No more than one output shorted at a time.
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
1
1
1
1
Parameter
Read Current
Program and Erase Current
Standby Current
Input Leakage Current
Output Leakage Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
R
ANGE
ECOMMENDED
APACITANCE (Ta = 25°C, f=1 Mhz, other pins open)
PERATING
Parameter
V
V
Description
Output Pin Capacitance
Input Capacitance
:
DD
DD
Ambient Temp
Min to Read Operation
Min to Write Operation
0°C to +70°C
1
C
S
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
YSTEM
HARACTERISTICS
P
OWER
2.7-3.6V
-
UP
V
0.7 V
V
DD
Min
DD
V
T
DD
-0.2
IMINGS
DD
= 2.7-3.6V
Limits
Max
400
0.8
0.2
10
30
15
1
1
AC C
Input Rise/Fall Time . . . . . . . . . . . . . . . 5 ns
Output Load . . . . . . . . . . . . . . . . . . . . . C
See Figures 19 and 20
Units
mA
mA
µA
µA
µA
V
V
V
V
ONDITIONS OF
Test Conditions
CE#=0.1 V
CE#=V
CE#=V
V
V
V
V
I
I
OL
OH
OUT
IN
DD
DD
=100 µA, V
=-100 µA, V
=GND to V
=V
=V
=GND to V
DD
DD
DD
DD
, V
Min
Max
DD
T
Test Condition
IN
EST
/0.9 V
=V
DD
DD
V
Minimum
DD
V
DD
OUT
, V
=V
DD
IN
=V
, V
10
10
DD
DD
DD
= 0V
or V
DD
= 0V
DD
=V
@20 MHz, SO=open
Min
=V
Min
SS
DD
DD
Max
Max
S71233-01-000
L
= 30 pF
Maximum
Units
12 pF
Data Sheet
6 pF
µs
µs
DD
DD
T7.0 1233
T8.0 1233
T9.0 1233
+0.5V
+2.0V
8/03