lc75810e Sanyo Semiconductor Corporation, lc75810e Datasheet - Page 21

• Manufacturer Part Number: lc75810e
• Description: 1/8 To 1/10 Duty Dot-matrix Lcd Display Controller Driver
• Manufacturer: Sanyo Semiconductor Corporation

IM1 and IM2: Sets the method of writing data to DCRAM
Note that the instruction execution time of 27 s and ti values in µs apply when fosc 300 kHz, and that these times will
differ when the oscillator frequency fosc differs.
21
IM1
For example
0
1
0
ti
data.)
DCRAM
DCRAM
DCRAM
DCRAM data write method when IM1 is 1 and IM2 is 0.
(Instructions other than the “DCRAM data write” instruction cannot be executed.)
DCRAM data write method when IM1 is 0 and IM2 is 1.
CCB address
CE
13.5 s (
IM2
CE
DI
CE
DI
0
0
1
DCRAM data write method when IM1 is 0 and IM2 is 0.
DI
CCB address
CCB address
Normal DCRAM data write (Specifies the DCRAM address and writes the DCRAM data.)
Normal increment mode DCRAM data write (Increments the DCRAM address by 1 each time data is written to DCRAM.)
Super-increment mode DCRAM data write (Writes 2 to 16 characters of DCRAM data in a single operation.)
n
8
time (27 µs)
Instruction
execution
When n
When n
When n
DCRAM data
write finishes
24 bits
-1) (n 8m + 16, m is an integer between 2 and 16 that is the number of characters written as DCRAM
(2)
time (27 µs)
Instruction
execution
24 bits
(1)
CCB address
n bit
time (ti s)
Instruction
(5)
execution
32 bits (m
80 bits (m
144 bits (m
CCB address
time (27 µs)
Instruction
execution
DCRAM data
write finishes
DCRAM data
write finishes
8 bits
CCB address
(3)
CCB address
DCRAM data
write finishes
(Instructions other than the “DCRAM data write” instruction cannot be executed.)
time (27 µs)
Instruction
2): ti
8): ti
execution
24 bits
16): ti
time (27 µs)
(1)
Instruction
execution
8 bits
CCB address
40.5 s (when fosc
121.5 s (when fosc
(3)
LC75810E/T
DCRAM data
write finishes
DCRAM data
write finishes
229.5 s (when fosc
n bit
Instruction
time (ti s)
execution
(5)
DCRAM data write method
CCB address
time (27 µs)
Instruction
execution
time (27 µs)
DCRAM data
write finishes
Instruction
24 bits
execution
(1)
8 bits
(3)
CCB address
DCRAM data
write finishes
300 kHz)
DCRAM data
write finishes
300 kHz)
300 kHz)
time (27 µs)
Instruction
execution
CCB address
8 bits
CCB address
(3)
CCB address
DCRAM data
write finishes
time (27 µs)
Instruction
execution
time (27 µs)
Instruction
16 bits
execution
24 bits
n bit
Instruction
time (ti s)
execution
(5)
(4)
(1)
DCRAM data
write finishes
DCRAM data
write finishes
DCRAM data
No.7141-21/54
write finishes