S4PB VISHAY [Vishay Siliconix], S4PB Datasheet - Page 3

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S4PB

Manufacturer Part Number
S4PB
Description
High Current Density Surface Mount Glass Passivated Rectifiers
Manufacturer
VISHAY [Vishay Siliconix]
Datasheet
RATINGS AND CHARACTERISTICS CURVES
(T
Document Number: 89032
Revision: 19-Apr-11
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
A
= 25 C unless otherwise noted)
0.01
100
Fig. 3 - Typical Instantaneous Forward Characteristics
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.1
10
Fig. 1 - Maximum Forward Current Derating Curve
0
0
1
0.3
0
0
Fig. 2 - Forward Power Loss Characteristics
T
A
T
at the Cathode Band Terminal
= 125 °C
L
25
measured
0.5
Instantaneous Forward Voltage (V)
T
1
A
Average Forward Current (A)
D = 0.1
= 150 °C
50
Lead Temperature (°C)
0.7
2
D = 0.2
75
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
D = 0.3
For technical questions within your region, please contact one of the following:
0.9
Resistive or Inductive Load
T
A
100
= 25 °C
3
D = 0.5
D = t
1.1
D = 0.8
125
p
/T
4
1.3
D = 1.0
150
This document is subject to change without notice.
T
t
p
175
1.5
5
New Product
1000
0.01
100
100
100
0.1
10
10
10
1
1
Fig. 4 - Typical Reverse Leakage Characteristics
0.01
0.1
10
DiodesEurope@vishay.com
Fig. 6 - Typical Transient Thermal Impedance
Vishay General Semiconductor
Percent of Rated Peak Reverse Voltage (%)
Junction to Ambient
20
Fig. 5 - Typical Junction Capacitance
30
0.1
T
A
t - Pulse Duration (s)
Reverse Voltage (V)
= 150 °C
40
1
50
S4PB thru S4PM
1
T
A
60
= 125 °C
www.vishay.com/doc?91000
10
70
T
A
T
f = 1.0 MHz
V
J
sig
= 25 °C
= 25 °C
10
80
= 50 mVp-p
90
www.vishay.com
100
100
100
3

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