V12P10-M3-86A VISHAY [Vishay Siliconix], V12P10-M3-86A Datasheet - Page 3

• Manufacturer Part Number: V12P10-M3-86A
• Description: High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
• Manufacturer: VISHAY [Vishay Siliconix]

RATINGS AND CHARACTERISTICS CURVES
(T
Document Number: 88981
Revision: 19-Apr-11
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
A
= 25 C unless otherwise noted)
0.01
100
Fig. 3 - Typical Instantaneous Forward Characteristics
14
12
10
10
0.1
10
8
6
4
2
0
Fig. 1 - Maximum Forward Current Derating Curve
9
8
7
6
5
4
3
2
1
0
1
100
0
0
Fig. 2 - Forward Power Loss Characteristics
T
at the Cathode Band Terminal
T
Resistive or Inductive Load
L
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
A
measured
= 125 °C
2
Instantaneous Forward Voltage (V)
110
D = 0.1
Average Forward Current (A)
4
Lead Temperature (°C)
D = 0.2
T
A
120
= 150 °C
[e-mail], [e-mail],
6
D = 0.3
For technical questions within your region, please contact one of the following:
T
A
= 25 °C
8
130
D = 0.5 D = 0.8
D = t
10
p
/T
140
0.9 1.0 1.1
This document is subject to change without notice.
T
12
D = 1.0
t
p
150
14
New Product
10 000
1000
100
100
10
0.001
0.01
100
1
0.01
0.1
Fig. 4 - Typical Reverse Leakage Characteristics
0.1
10
[e-mail]
1
Fig. 6 - Typical Transient Thermal Impedance
10
Vishay General Semiconductor
Junction to Ambient
Fig. 5 - Typical Junction Capacitance
Percent of Rated Peak Reverse Voltage (%)
20
0.1
T
30
A
= 25 °C
t - Pulse Duration (s)
Reverse Voltage (V)
1
T
40
A
= 150 °C
T
T
A
A
50
= 125 °C
= 100 °C
1
60
www.vishay.com/doc?91000
10
70
10
80
www.vishay.com
V12P10
90
100
100
100
3