at-38086-tr1 Avago Technologies, at-38086-tr1 Datasheet - Page 2

• Manufacturer Part Number: at-38086-tr1
• Description: 4.8 V Npn Silicon Bipolar Common Emitter Transistor -
• Manufacturer: Avago Technologies

AT-38086 Absolute Maximum Ratings
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. Pulsed operation, pulse width = 577ּ
3. CW operation.
4. Derate at 57.1 mW/ C for T
5. Derate at 7.1 mW/ C for T
6. Using the liquid crystal technique, V
Electrical Specifications, T
Notes:
1. With external matching on input and output, tested in a 50 ohm environment. Refer to Test Circuit A (GSM).
2. With external matching on input and output, tested in a 50 ohm environment. Refer to Test Circuit B (AMPS).
3. Test circuit B re-tuned at 900ּ MHz.
Symbol
Symbol
collector pin 3, where the lead contacts the circuit board.
collector pin 3, where the lead contacts the circuit board.
“hot-spot” resolution.
P
P
IMD
BV
BV
BV
h
I
CEO
FE
V
V
V
out
C
out
T
P
P
T
I
I
EBO
CBO
CEO
EBO
CBO
CEO
STG
C
C
T
T
3
j
Freq. = 900 MHz, V
duty cycle = 12.5%, unless otherwise specified
Output Power,
Pulsed Operation
Collector Efficiency,
Pulsed Operation
Mismatch Tolerance
No Damage, Pulsed
Output Power,
CW Operation
3rd Order Intermodulation Distortion,
2-Tone Test, P
Mismatch Tolerance, No Damage,
CW
Emitter-Base Breakdown Voltage
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Forward Current Transfer Ratio
Collector Leakage Current
[2]
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Collector Current
Peak Power Dissipation
CW Power Dissipation
Junction Temperature
Storage Temperature
Parameter
out
[2]
C
each tone = +17 dBm, CW
ּ >ּ 85
C
Parameters and Test Conditions
[1]
[1]
ּ >ּ 85
CE
[1]
= 4.8 V, I
[2]
[3]
C. T
CE
C. T
sec, duty cycleּ =ּ 12.5%.
= 4.5 V, I
C
C
= 25 C
C
[3, 5]
is defined to be the temperature of the
CQ
is defined to be the temperature of the
[2, 4]
= 20 mA, Pulse width = 577 sec,
c
= 50 mA, T
Units
mW
mA
mA
W
V
V
V
C
C
[2,3]
Test Circuit B, P
Test Circuit A, P
Test Circuit A, P
Test Circuit A, P
Test Circuit B, P
4-90
F1 = 899 MHz, F2 = 901 MHz
F = 836.5 MHz, I
F = 836.5 MHz, I
j
I
=150 C, 1-2ּ
I
E
any phase, 2 sec duration
CQ
any phase, 2 sec duration
I
= 0.2 mA, open collector
C
Maximum
= 1.0 mA, open emitter
= 15 mA, Test Circuit B
Absolute
I
-65 to 150
C
V
= 3.0 mA, open base
CE
16.0
250
160
460
150
1.4
9.5
3.7
= 3 V, I
out
out
= +23.5 dBm
in
in
in
= +28 dBm,
[1]
m
= +17 dBm
= +17 dBm
= +10 dBm
CQ
CQ
C
= 160 mA
V
= 15 mA
= 15 mA
CEO
= 5 V
Thermal Resistance
Units Min.
dBm
dBm
dBc
—
%
V
V
V
A
jc
= 140 C/W
+26.5
+22.0
16.0
1.4
9.5
50
40
Typ. Max.
+28.0
+23.5
150
-35
60
[6]
330
:
7:1
7:1
15