BT139-600E_11 NXP [NXP Semiconductors], BT139-600E_11 Datasheet - Page 2

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BT139-600E_11

Manufacturer Part Number
BT139-600E_11
Description
4Q Triac High blocking voltage capability
Manufacturer
NXP [NXP Semiconductors]
Datasheet
NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
BT139-600E
Product data sheet
Pin
1
2
3
mb
Type number
BT139-600E
BT139-600E/DG
Symbol Description
T1
T2
G
T2
Pinning information
Ordering information
main terminal 1
main terminal 2
gate
mounting base; main terminal 2
Table 1.
[1]
Package
Name
TO-220AB
TO-220AB
Symbol
Static characteristics
I
GT
Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac
may switch to the on-state. The rate of rise of current should not exceed 15 A/ms.
Parameter
gate trigger current
Quick reference data
Description
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
All information provided in this document is subject to legal disclaimers.
Rev. 04 — 24 February 2011
Simplified outline
…continued
Conditions
V
T
V
T
V
T
V
T
SOT78 (TO-220AB)
j
j
j
j
D
D
D
D
= 25 °C; see
= 25 °C; see
= 25 °C; see
= 25 °C; see
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; I
1 2
mb
T
T
T
T
3
= 0.1 A; T2+ G+;
= 0.1 A; T2+ G-;
= 0.1 A; T2- G-;
= 0.1 A; T2- G+;
Figure 7
Figure 7
Figure 7
Figure 7
Graphic symbol
BT139-600E
Min
-
-
-
-
T2
sym051
© NXP B.V. 2011. All rights reserved.
Typ
2.5
4
5
11
Version
SOT78
SOT78
T1
G
Max Unit
10
10
10
25
4Q Triac
2 of 14
mA
mA
mA
mA

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