BT139-600E_11 NXP [NXP Semiconductors], BT139-600E_11 Datasheet - Page 7

• Manufacturer Part Number: BT139-600E_11
• Description: 4Q Triac High blocking voltage capability
• Manufacturer: NXP [NXP Semiconductors]

NXP Semiconductors
6. Characteristics
Table 6.
BT139-600E
Product data sheet
Symbol
Static characteristics
I
I
I
V
V
I
Dynamic characteristics
dV
t
GT
L
H
D
gt
T
GT
D
/dt
Characteristics
Parameter
gate trigger current
latching current
holding current
on-state voltage
gate trigger voltage
off-state current
gate-controlled turn-on time
rate of rise of off-state voltage
All information provided in this document is subject to legal disclaimers.
Rev. 04 — 24 February 2011
Conditions
V
T
V
T
V
T
V
T
V
T
V
T
V
T
V
T
V
I
V
see
V
V
V
exponential waveform; gate open
circuit
I
I
T
TM
G
j
j
j
j
j
j
j
j
D
D
D
D
D
D
D
D
D
D
D
D
DM
= 20 A; T
= 25 °C; see
= 25 °C; see
= 25 °C; see
= 25 °C; see
= 25 °C; see
= 25 °C; see
= 25 °C; see
= 25 °C; see
= 100 mA; dI
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; T
= 12 V; I
= 400 V; I
= 402 V; T
= 20 A; V
Figure 11
= 402 V; T
j
T
T
T
T
G
G
G
G
T
j
= 25 °C; see
T
D
= 0.1 A; T2+ G+;
= 0.1 A; T2+ G-;
= 0.1 A; T2- G-;
= 0.1 A; T2- G+;
= 0.1 A; T
= 25 °C; see
= 0.1 A; T2+ G+;
= 0.1 A; T2+ G-;
= 0.1 A; T2- G-;
= 0.1 A; T2- G+;
j
= 0.1 A; T
= 125 °C
= 600 V;
j
G
Figure 7
Figure 7
Figure 7
Figure 7
Figure 8
Figure 8
Figure 8
Figure 8
= 125 °C;
/dt = 5 A/µs
j
= 25 °C;
j
= 125 °C
Figure 10
Figure 9
Min
-
-
-
-
-
-
-
-
-
-
-
0.25
-
-
-
BT139-600E
Typ
2.5
4
5
11
3.2
16
4
5.5
4
1.2
0.7
0.4
0.1
50
2
© NXP B.V. 2011. All rights reserved.
Max
10
10
10
25
30
40
30
40
45
1.6
1.5
-
0.5
-
-
4Q Triac
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
V
V
V
mA
V/µs
µs
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