BT139-600E_11 NXP [NXP Semiconductors], BT139-600E_11 Datasheet - Page 3

• Manufacturer Part Number: BT139-600E_11
• Description: 4Q Triac High blocking voltage capability
• Manufacturer: NXP [NXP Semiconductors]

NXP Semiconductors
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
BT139-600E
Product data sheet
Symbol
V
I
I
I
dI
I
P
P
T
T
T(RMS)
TSM
2
GM
stg
j
DRM
t
GM
G(AV)
T
/dt
Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state. The
rate of rise of current should not exceed 15 A/ms.
Limiting values
Parameter
repetitive peak off-state voltage
RMS on-state current
non-repetitive peak on-state current
I
rate of rise of on-state current
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
2
t for fusing
All information provided in this document is subject to legal disclaimers.
Rev. 04 — 24 February 2011
Conditions
full sine wave; T
see
full sine wave; T
see
full sine wave; T
t
I
T2+ G+
I
T2+ G-
I
T2- G-
I
T2- G+
over any 20 ms period
p
T
T
T
T
= 10 ms; sine-wave pulse
= 20 A; I
= 20 A; I
= 20 A; I
= 20 A; I
Figure
Figure
G
G
G
G
2; see
4; see
= 200 mA; dI
= 200 mA; dI
= 200 mA; dI
= 200 mA; dI
mb
j(init)
j(init)
Figure 3
Figure 5
≤ 99 °C; see
= 25 °C; t
= 25 °C; t
G
G
G
G
/dt = 0.2 A/µs;
/dt = 0.2 A/µs;
/dt = 0.2 A/µs;
/dt = 0.2 A/µs;
p
p
= 20 ms;
= 16.7 ms
Figure
1;
BT139-600E
[1]
Min
-
-
-
-
-
-
-
-
-
-
-
-
-40
-
© NXP B.V. 2011. All rights reserved.
150
125
Max
600
16
155
170
120
50
50
50
10
2
5
0.5
4Q Triac
Unit
V
A
A
A
A
A/µs
A/µs
A/µs
A/µs
A
W
W
°C
°C
3 of 14
2
s