rf2129 RF Micro Devices, rf2129 Datasheet

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rf2129

Manufacturer Part Number
rf2129
Description
3v, 2.5ghz Linear Power Amplifier
Manufacturer
RF Micro Devices
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
RF2129
Manufacturer:
RFMD
Quantity:
20 000
Product Description
The RF2129 is a linear, medium power, high efficiency
amplifier IC designed specifically for low voltage opera-
tion. The device is manufactured on an advanced Gallium
Arsenide Heterojunction Bipolar Transistor (HBT) pro-
cess, and has been designed for use as the final RF
amplifier in 2.5GHz spread spectrum transmitters. The
device is packaged in an 8-lead plastic package with a
backside ground and is self-contained with the exception
of the output matching network and power supply feed
line.
Optimum Technology Matching® Applied
Rev B4 000323
Typical Applicat ions
• 2.5GHz ISM Band Applications
• PCS Communication Systems
• Wireless LAN Systems
Si BJT
Si Bi-CMOS
VCC2
VCC2
RF IN
NC
Funct ional Block Diagram
1
2
3
4
ü
PACKAGE BASE
GaAs HBT
SiGe HBT
GND
CIRCUITS
2
BIAS
GaAs MESFET
Si CMOS
8
7
6
5
VCC1
RF OUT
RF OUT
PC
• Commercial and Consumer Systems
• Portable Battery Powered Equipment
• Broadband Spread Spectrum Systems
8°MAX
0°MIN
Feat ures
Ordering Infor mat ion
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA
.196
.189
• Single 3.3V Power Supply
• +26dBm Saturated Output Power
• 27dB Small Signal Gain
• High Power Added Efficiency
• Power Down Mode
• 1800MHz to 2500MHz Frequency Range
RF2129
RF2129 PCBA
Refer to “Handling of PSOP and PSSOP Products” on page 16-15
for special handling information.
3V, 2.5GHZ LINEAR POWER AMPLIFIER
1
.035
.016
.244
.230
.157
.150
.010
.007
Package Style: PSOP-8
3V, 2.5GHz Linear Power Amplifier
Fully Assembled Evaluation Board
.050
.019
.014
.061
.055
.010
.004
RF2129
http://www.rfmd.com
Fax (336) 664 0454
Tel (336) 664 1233
.087
.071
EXPOSED
HEATSINK
.123
.107
2-93
2

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rf2129 Summary of contents

Page 1

... ISM Band Applications • PCS Communication Systems • Wireless LAN Systems Product Description The RF2129 is a linear, medium power, high efficiency amplifier IC designed specifically for low voltage opera- tion. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) pro- cess, and has been designed for use as the final RF amplifier in 2 ...

Page 2

... RF2129 Absolute Maximum Ratings Parameter Supply Voltage Power Control Voltage ( Supply Current Input RF Power 2 Operating Ambient Temperature Storage Temperature Moisture sensitivity Parameter Overall Frequency Range Maximum Saturated Output Power Efficiency at max output power Small Signal Gain Reverse Isolation Second Harmonic ...

Page 3

... Pkg GND Ground connection. The backside of the package should be connected to the ground plane through a short path, i.e., vias under the device Base may be required. Rev B4 000323 RF2129 Interface Schematic VCC2 BIAS See pin 1. See pin 1. VCC1 ...

Page 4

... RF2129 3 C10 C11 2-96 Applicat ion Schemat ic 2.45GHz Operat ion 3.3 pF BIAS 1 CIRCUITS PACKAGE BASE Evaluat ion Board Schemat ic (Download Bill of Materials from www.rfmd.com L=0.250" 3.3 pF BIAS ...

Page 5

... Evaluat ion Board Layout Rev B4 000323 2” x 2” RF2129 2 2-97 ...

Page 6

... RF2129 2 2-98 Rev B4 000323 ...

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