rf2175 RF Micro Devices, rf2175 Datasheet
rf2175
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rf2175 Summary of contents
Page 1
... Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in TETRA hand-held digital cellular equipment, spread-spectrum systems, and other applications in the 380MHz to 512MHz band. The RF2175 has an analog bias control voltage to maximize efficiency. The device is self-con- tained with 50 input, and the output can be easily matched to obtain optimum power, efficiency, and linear- ity characteristics ...
Page 2
... Voltage REG V Control Voltage Range BIAS * The RF2175 is considered JEDEC Level 5 for moisture sensitivity with a maximum peak reflow temperature of 220°C. To assure reli- able performance, this part must be handled in accordance with JEDEC specifications for a Level 5 part. 2-244 Rating Unit +8 ...
Page 3
... Ground connection. The backside of the package should be soldered to a top side ground pad, which is connected to the ground plane with Base multiple vias. The pad should have a short thermal path to the ground plane. Rev A6 010718 should be fed through a 25nH or greater CC side connected to this pin. 0 RF2175 Interface Schematic requires a 2-245 2 ...
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... RF2175 VCC = IN: TETRA Modulation VREG 4.7 pF 2.2 uF 2-246 Applicat ion Schemat ic 380MHz Bias 100 pF VREG (VACP) = 2 off 25% duty cycle, 14.17 ms pulse width Preliminary ...
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... Rev A6 010718 C15 C14 100 pF 2 Bias 2 15 C13 L7 5 12. 100 2175400A RF2175 VMODE C17 4.7 F C11 3 strip J2 RF OUT C9 C10 VCC P1 P2 P1-1 1 VCC P2-1 1 VCC 2 GND 2 GND P1-3 ...
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... RF2175 2 2-248 Evaluation Board Layout Board Size 2.0” x 2.0” Board Thickness 0.028”, Board Material FR-4 Preliminary Rev A6 010718 ...