rf2161 RF Micro Devices, rf2161 Datasheet

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rf2161

Manufacturer Part Number
rf2161
Description
3v W-cdma Power 1900mhz 3v Linear Power Amplifier
Manufacturer
RF Micro Devices
Datasheet
Product Description
The RF2161 is a high-power, high-efficiency linear ampli-
fier IC targeting 3V handheld systems. The device is
manufactured on an advanced Gallium Arsenide Hetero-
junction Bipolar Transistor (HBT) process, and has been
designed for use as the final RF amplifier in 3V
CDMA-2000 and W-CDMA handsets, spread spectrum
systems, and other applications in the 1920MHz to
1980 MHz band. The device is self-contained with 50
input and the output can be easily matched to obtain opti-
mum power, efficiency, and linearity characteristics over
all recommended supply voltages.
Optimum Technology Matching® Applied
Rev A3 010514
Typical Applicat ions
• 3V 1850-1910 CDMA-2000 Handsets
• 3V 1920-1980 W-CDMA Handsets
• Spread Spectrum Systems
Si BJT
Si Bi-CMOS
GND2
VCC1
RFIN
Funct ional Block Diagram
1
2
3
4
5
ü
16
6
GaAs HBT
SiGe HBT
15
7
2
14
8
Preliminary
13
12
11
10
9
GaAs MESFET
Si CMOS
RF OUT
RF OUT
RF OUT
• Commercial and Consumer Systems
• Portable Battery-Powered Equipment
Feat ures
Ordering Infor mat ion
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA
• Single 3V Supply
• 27dBm Linear Output Power
• 30dB Linear Gain
• 35% Linear Efficiency
• On-board Power Down Mode
RF2161
RF2161 PCBA
ALL SOLDER PAD TOLERANCES P0.05mm
1
4.20
3.95
3.50
3.35
Package St yle: MP16KO1A
3.50
3.35
3V LINEAR POWER AMPLIFIER
3V W-CDMA Power 1900MHZ 3V Linear Power
Amplifier
Fully Assembled Evaluation Board
3V W-CDMA POWER 1900MHZ
4.20
3.95
1.50
1.20
0.38
0.28
0.13
2.00
RF2161
0.80
http://www.rfmd.com
Fax (336) 664 0454
Tel (336) 664 1233
0.40
sq.
1.50 sq.
2-197
2

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rf2161 Summary of contents

Page 1

... CDMA-2000 Handsets • 3V 1920-1980 W-CDMA Handsets • Spread Spectrum Systems Product Description The RF2161 is a high-power, high-efficiency linear ampli- fier IC targeting 3V handheld systems. The device is manufactured on an advanced Gallium Arsenide Hetero- junction Bipolar Transistor (HBT) process, and has been ...

Page 2

... RF2161 Absolute Maximum Ratings Parameter Supply Voltage (RF off) Supply Voltage (P 31dBm) OUT Mode Voltage (V ) MODE Control Voltage ( Input RF Power Operating Case Temperature Storage Temperature Parameter Overall Usable Frequency Range Typical Frequency Range Linear Gain Second Harmonic (including second harmonic trap) ...

Page 3

... VCC2 Same as Pin 1. 16 VCC2 Same as Pin 1. Rev A3 010514 should be fed CC requires a regu- PD1 MODE requires a regulated 2.8V for the amplifier PD RF2161 Interface Schematic 2 See pin 4. VCC1 RF IN From Bias GND1 Stages See pin 4. RF OUT From Bias Stages See pin 10. ...

Page 4

... RF2161 Pin Function Description Pkg GND Ground connection. The backside of the package should be soldered to a top side ground pad which is connected to the ground plane with Base multiple vias. The pad should have a short thermal path to the ground plane. 2 2-200 Preliminary Interface Schematic ...

Page 5

... High Q inductor (i.e., Coilcraft 0805HQ-series). **C1 and C14 are High Q capacitors (i.e., Johanson C-series). Transmission Line Length C1 (pF) L1 (nH) C14 (pF) WCDMA 4.7 16 2.2 RF2161 OUT C1** C14 0.044" 0.140" 0.022" 2-201 2 ...

Page 6

... RF2161 W-CDMA (1920MHz to 1980MHz C12 10 nF C11 8 strip Board C30 (pF) WCDMA 150 8.2 2-202 Evaluat ion Board Schemat C30 1 2161400- ...

Page 7

... Preliminary Evaluat ion Board Layout Board Size 2.00” x 2.00” Board Thickness 0.028”, Board Material FR-4, Multi-Layer, Ground Plane at 0.014” Rev A3 010514 RF2161 2 2-203 ...

Page 8

... RF2161 2 2-204 Preliminary Rev A3 010514 ...

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