1MBI400V-120-50 FUJI [Fuji Electric], 1MBI400V-120-50 Datasheet - Page 2

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1MBI400V-120-50

Manufacturer Part Number
1MBI400V-120-50
Description
IGBT MODULE (V series) 1200V / 400A / 1 in one package
Manufacturer
FUJI [Fuji Electric]
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
1MBI400V-120-50
Manufacturer:
FUJITSU/富士通
Quantity:
20 000
1MBI400V-120-50
Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound.
Items
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Turn-on time
Turn-off time
Forward on voltage
Reverse recovery time
Items
Thermal resistance (1device)
Contact thermal resistance (*4)
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Thermal resistance characteristics
Symbols
I
I
V
V
(terminal)
V
(chip)
Cies
ton
tr
tr(i)
toff
tf
V
(terminal)
V
(chip)
trr
Symbols
Rth(j-c)
Rth(c-f)
CES
GES
GE (th)
CE (sat)
CE (sat)
F
F
Conditions
IGBT
FWD
with Thermal Compound
Conditions
V
V
V
V
I
V
V
V
Tj=150°C, Ls=35nH
V
I
I
C
F
F
GE
CE
CE
GE
GE
CC
GE
GE
= 400A
= 400A
= 400A
= 0V, V
= 0V, V
= 20V, I
= 15V
= 0V, V
= 600V, I
= ±15V, R
= 0V
2
GE
CE
CE
C
= 400mA
C
= 10V, f = 1MHz
= 1200V
= ±20V
G
= 400A
= 1.8Ω
Tj=25°C
Tj=125°C
Tj=150°C
Tj=25°C
Tj=125°C
Tj=150°C
Tj=25°C
Tj=125°C
Tj=150°C
Tj=25°C
Tj=125°C
Tj=150°C
http://www.fujielectric.com/products/semiconductor/
min.
min.
6.0
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Characteristics
Characteristics
0.0125
1.95
2.25
2.30
1.75
2.05
2.10
0.60
0.20
0.08
1.00
0.14
1.85
2.00
1.95
1.70
1.85
1.80
0.20
typ.
typ.
6.5
36
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IGBT Modules
0.062
0.110
max.
max.
2.40
2.15
2.30
2.15
800
2.0
7.0
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Units
Units
°C/W
mA
nA
nF
µs
µs
V
V
V

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