1MBI400V-120-50 FUJI [Fuji Electric], 1MBI400V-120-50 Datasheet - Page 4

• Manufacturer Part Number: 1MBI400V-120-50
• Description: IGBT MODULE (V series) 1200V / 400A / 1 in one package
• Manufacturer: FUJI [Fuji Electric]

1MBI400V-120-50
10000
10000
1000
1000
100
100
150
100
Vcc=600V, Ic=400A, V
10
10
50
0
Vcc=600V, V
Vcc=600V, Ic=400A, V
Switching time vs. Collector current (typ.)
0
1
1
Switching loss vs. Gate resistance (typ.)
Switching time vs. Gate resistance (typ.)
200
Gate resistance: R
Collector current: Ic [A]
Tj=125
Tj=150
Gate resistance: R
GE
400
=±15V, Rg=1.8Ω, Tj=125°C
o
o
C
C
GE
10
10
=±15V, Tj=125°C, 150°C
GE
600
=±15V, Tj=125°C
G
G
[Ω]
toff
ton
tr
tf
Eon
Eoff
Err
[Ω]
800
toff
ton
tr
tf
1000
100
100
4
+V
10000
GE
1000
1000
100
Vcc=600V, V
100
800
600
400
200
=15V, -V
10
80
60
40
20
0
0
Reverse bias safe operating area (max.)
Vcc=600V, V
Switching time vs. Collector current (typ.)
0
0
Switching loss vs. Collector current (typ.)
0
http://www.fujielectric.com/products/semiconductor/
GE
Collector-Emitter voltage: V
200
200
=15V, R
GE
400
Tj=125
Tj=150
Collector current: Ic [A]
Collector current: Ic [A]
=±15V, R
GE
=±15V, Rg=1.8Ω, Tj=150°C
400
400
o
o
G
C
C
=1.8Ω, Tj=150°C, Ls=35nH
800
G
=1.8Ω, Tj=125°C, 150°C
600
600
1200
CE
800
800
[V]
IGBT Modules
toff
ton
tr
tf
Eoff
Eon
Err
1600
1000
1000