SI4473BDY-E3 VISHAY [Vishay Siliconix], SI4473BDY-E3 Datasheet - Page 3

• Manufacturer Part Number: SI4473BDY-E3
• Description: P-Channel 14-V (D-S) MOSFET
• Manufacturer: VISHAY [Vishay Siliconix]

Document Number: 72691
S-32676—Rev. A, 29-Dec-03
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.05
0.04
0.03
0.02
0.01
0.00
50
10
5
4
3
2
1
0
1
0.0
0
0
V
I
V
D
DS
GS
Source-Drain Diode Forward Voltage
= 13 A
0.2
10
On-Resistance vs. Drain Current
= 10 V
= 2.5 V
10
V
T
SD
Q
J
g
= 150_C
− Source-to-Drain Voltage (V)
I
0.4
− Total Gate Charge (nC)
D
20
− Drain Current (A)
Gate Charge
20
0.6
30
30
V
GS
0.8
40
= 4.5 V
T
40
J
= 25_C
1.0
50
1.2
50
60
New Product
0.060
0.050
0.040
0.030
0.020
0.010
0.000
6400
5600
4800
4000
3200
2400
1600
800
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0
−50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
−25
D
GS
I
= 13 A
2
D
= 4.5 V
= 2.5 A
1
T
V
V
0
J
GS
DS
− Junction Temperature (_C)
4
− Gate-to-Source Voltage (V)
C
− Drain-to-Source Voltage (V)
rss
25
Capacitance
2
6
C
Vishay Siliconix
50
iss
I
D
= 13 A
8
3
Si4473BDY
75
10
100
C
oss
www.vishay.com
4
12
125
150
14
5
3