SI4848DY-T1 VISHAY [Vishay Siliconix], SI4848DY-T1 Datasheet - Page 3

• Manufacturer Part Number: SI4848DY-T1
• Description: N-Channel 150-V (D-S) MOSFET
• Manufacturer: VISHAY [Vishay Siliconix]

Document Number: 71356
S-03950—Rev. B, 26-May-03
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.15
0.12
0.09
0.06
0.03
0.00
20
16
12
50
10
8
4
0
1
0.0
0
0
V
I
D
DS
Source-Drain Diode Forward Voltage
= 3.5 A
0.2
On-Resistance vs. Drain Current
= 75 V
5
6
V
SD
Q
g
- Source-to-Drain Voltage (V)
V
I
T
0.4
D
- Total Gate Charge (nC)
GS
J
= 150_C
- Drain Current (A)
Gate Charge
10
12
= 6 V
0.6
15
18
0.8
V
GS
T
J
20
24
= 10 V
= 25_C
1.0
1.2
25
30
1200
0.25
0.20
0.15
0.10
0.05
0.00
900
600
300
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
-50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
D
-25
GS
= 3.5 A
C
= 10 V
rss
30
2
T
V
V
0
J
DS
GS
- Junction Temperature (_C)
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
25
Capacitance
60
4
Vishay Siliconix
C
50
C
oss
iss
I
90
D
6
75
= 3.5 A
Si4848DY
100
120
www.vishay.com
8
125
150
150
10
3