SI4876DY-T1 VISHAY [Vishay Siliconix], SI4876DY-T1 Datasheet - Page 3

• Manufacturer Part Number: SI4876DY-T1
• Description: N-Channel 20-V (D-S) MOSFET
• Manufacturer: VISHAY [Vishay Siliconix]

Document Number: 71312
S-03950—Rev. C, 26-May-03
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.010
0.008
0.006
0.004
0.002
0.000
50
10
10
1
8
6
4
2
0
0.00
0
0
V
I
D
Source-Drain Diode Forward Voltage
20
DS
T
= 21 A
0.2
On-Resistance vs. Drain Current
V
J
10
= 10 V
SD
= 150_C
Q
40
- Source-to-Drain Voltage (V)
g
I
0.4
D
- Total Gate Charge (nC)
- Drain Current (A)
Gate Charge
20
60
0.6
80
30
0.8
V
V
100
GS
GS
T
J
= 2.5 V
= 4.5 V
= 25_C
40
1.0
120
1.2
140
50
0.020
0.015
0.010
0.005
0.000
8000
6000
4000
2000
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
C
On-Resistance vs. Junction Temperature
rss
- 25
V
I
D
V
GS
= 21 A
GS
V
4
= 4.5 V
1
DS
T
- Gate-to-Source Voltage (V)
C
J
oss
0
- Junction Temperature (_C)
- Drain-to-Source Voltage (V)
25
Capacitance
8
2
Vishay Siliconix
50
C
iss
12
3
I
75
D
Si4876DY
= 21 A
100
www.vishay.com
16
4
125
150
20
5
3