SUM110N06-3M4L_08 VISHAY [Vishay Siliconix], SUM110N06-3M4L_08 Datasheet - Page 4

• Manufacturer Part Number: SUM110N06-3M4L_08
• Manufacturer: VISHAY [Vishay Siliconix]

SUM110N06-3m4L
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
1000
2.3
2.0
1.7
1.4
1.1
0.8
0.5
100
0
0.1
10
0 .
- 50
1
0
0
0
1
On-Resistance vs. Junction Temperature
V
I
- 25
D
I
GS
AV
= 30 A
0
(A) at T
= 10 V
0 .
0
0
0
Avalanche Current vs. Time
T
1
J
- Junction Temperature (°C)
A
25
= 150 °C
0.001
I
AV
50
(A) at T
t
in
(s)
75
0.01
A
= 25 °C
100
125
0
1 .
150
175
1
100
10
74
72
70
68
66
64
62
60
1
- 50
0
- 25
I
D
Source-Drain Diode Forward Voltage
= 10 mA
Drain Source Breakdown vs.
T
V
0
J
0.3
SD
T
= 150 °C
Junction Temperature
J
- Source-to-Drain Voltage (V)
- Junction Temperature (°C)
25
50
0.6
S-80272-Rev. B, 11-Feb-08
Document Number: 73036
75
100
T
J
0.9
= 25 °C
125
150
1.2
175