SUM110P04-05_08 VISHAY [Vishay Siliconix], SUM110P04-05_08 Datasheet
SUM110P04-05_08
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SUM110P04-05_08 Summary of contents
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... DS(on) 0.005 TO-263 Drain Connected to Tab Top View Ordering Information: SUM110P04-05-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 175 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Avalanche Current Single-Pulse Avalanche Energy ...
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... SUM110P04-05 Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...
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... Gate Charge Document Number: 73493 S-80274-Rev. B, 11-Feb- 1.5 2.0 16000 14000 12000 10000 80 100 120 160 200 240 SUM110P04-05 Vishay Siliconix ° ° 125 ° Gate-to-Source Voltage (V) GS Transfer Characteristics ...
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... SUM110P04-05 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 T = 150 ° 0.0 0.3 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 1 0.9 0.7 0.5 0.3 0.1 - 0.1 - 0 Temperature (°C) J Threshold Voltage www.vishay.com °C J 0.9 1.2 1.5 100 125 150 175 1000 Limited ...
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... S-80274-Rev. B, 11-Feb-08 100 125 150 175 0.001 0.01 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper J(max) SUM110P04-05 Vishay Siliconix 400 350 300 250 200 150 100 50 0 ...
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All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or ...