SUM110P04-04L Vishay Siliconix, SUM110P04-04L Datasheet

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SUM110P04-04L

Manufacturer Part Number
SUM110P04-04L
Description
P-Channel 40-V (D-S) 175-LC MOSFET
Manufacturer
Vishay Siliconix
Datasheet

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Part Number:
SUM110P04-04L
Manufacturer:
VISHAY
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Part Number:
SUM110P04-04L
Manufacturer:
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SUM110P04-04L-E3
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Quantity:
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Notes:
a.
b.
c.
d.
Document Number: 72437
S-40840—Rev. B, 03-May-04
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
(T
Pulsed Drain Current
Avalanche Current
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Junction-to-Ambient PCB Mount
Junction-to-Case
J
V
Duty cycle v 1%.
When mounted on 1” square PCB (FR-4 material).
See SOA curve for voltage derating.
Limited by package.
= 175_C)
DS
−40
−40
(V)
Ordering Information: SUM110P04-04L
d
d
0.0062 @ V
0.0042 @ V
a
b
G
Top View
TO-263
r
DS(on)
P-Channel 40-V (D-S) 175_C MOSFET
D
Parameter
Parameter
GS
GS
S
= −4.5 V
(W)
= −10 V
C
T
T
L = 0 1 mH
L = 0.1 mH
T
T
= 25_C UNLESS OTHERWISE NOTED)
C
A
C
C
= 125_C
= 25_C
= 25_C
= 25_C
I
D
−110
−110
(A)
b
d
Symbol
Symbol
FEATURES
D TrenchFETr Power MOSFET
D New Package with Low Thermal Resistance
APPLICATIONS
D Automotive
T
R
R
J
V
V
E
I
I
P
P
, T
DM
thJA
thJC
I
I
AS
GS
DS
AS
D
D
D
D
− 12-V Boardnet
− High-Side Switches
− Motor Drives
G
stg
P-Channel MOSFET
S
D
SUM110P04-04L
−55 to 175
Vishay Siliconix
Limit
Limit
−110
−110
−240
"20
375
3.75
−40
−75
281
0.4
40
www.DataSheet4U.com
c
www.vishay.com
Unit
Unit
_C/W
_C/W
mJ
_C
W
W
V
A
A
1

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SUM110P04-04L Summary of contents

Page 1

... DS DS(on) 0.0042 @ V = − −40 −40 0.0062 @ V = −4 TO-263 Top View Ordering Information: SUM110P04-04L ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage d d Continuous Drain Current Continuous Drain Current (T = 175_C) J Pulsed Drain Current Avalanche Current a Single Pulse Avalanche Energy ...

Page 2

... SUM110P04-04L Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current g a On-State Drain Current a a Drain Source On State Resistance Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... S-40840—Rev. B, 03-May- 0.010 T = −55_C C 25_C 0.008 125_C 0.006 0.004 0.002 0.000 iss C rss SUM110P04-04L www.DataSheet4U.com Vishay Siliconix Transfer Characteristics 200 175 150 125 100 125_C C 50 25_C 25 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 V − Gate-to-Source Voltage (V) GS On-Resistance vs ...

Page 4

... SUM110P04-04L Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 2 1.7 1.4 1.1 0.8 0.5 −50 − − Junction Temperature (_C) J Avalanche Current vs. Time 1000 100 150_C AV A 0.1 0.0001 0.001 0.01 0.1 t (Sec) in www.vishay.com 4 100 100 125 ...

Page 5

... Single Pulse 0.01 −4 10 Document Number: 72437 S-40840—Rev. B, 03-May-04 1000 125 150 175 Normalized Thermal Transient Impedance, Junction-to-Case −3 − Square Wave Pulse Duration (sec) SUM110P04-04L www.DataSheet4U.com Vishay Siliconix Safe Operating Area Limited by r DS(on) 100 25_C C Single Pulse 0.1 0.1 1 ...

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