mx25l1635dzni-10g Macronix International Co., mx25l1635dzni-10g Datasheet - Page 5

• Manufacturer Part Number: mx25l1635dzni-10g
• Description: Serial Flash Memory
• Manufacturer: Macronix International Co.

P/N: PM1374
GENERAL
• Serial Peripheral Interface compatible -- Mode 0 and Mode 3
• 16M:16,777,216 x 1 bit structure or 8,388,608 x 2 bits (two I/O read mode) structure or 4,194,304 x 4 bits (four
• 512 Equal Sectors with 4K byte each
• 32 Equal Blocks with 64K byte each
• Single Power Supply Operation
• Latch-up protected to 100mA from -1V to Vcc +1V
PERFORMANCE
• High Performance
• Low Power Consumption
• Typical 100,000 erase/program cycles
• 20 years data retention
SOFTWARE FEATURES
• Input Data Format
• Advanced Security Features
• Auto Erase and Auto Program Algorithm
• Status Register Feature
• Electronic Identification
FEATURES
I/O read mode) structure
- Any Sector can be erased individually
- Any Block can be erased individually
- 2.7 to 3.6 volt for read, erase, and program operations
- Fast read
- Fast access time: 104MHz & 86MHz serial clock (15pF + 1TTL Load) and 66MHz serial clock (30pF + 1TTL
Load)
- Serial clock of four I/O read mode : 80MHz (15pF + TTL Load), which is equivalent to 320MHz
- Fast program time: 1.4ms(typ.) and 5ms(max.)/page (256-byte per page)
- Byte program time: 9us (typical)
- Continuously program mode (automatically increase address under word program mode)
- Fast erase time: 60ms (typ.)/sector (4K-byte per sector) ; 0.7s(typ.) /block (64K-byte per block); 14s(typ.) /chip
- Low active read current: 25mA(max.) at 104MHz & 86MHz, 20mA(max.) at 66MHz and 10mA(max.) at 33MHz
- Low active programming current: 20mA (max.)
- Low active erase current: 20mA (max.)
- Low standby current: 20uA (max.)
- Block lock protection
The BP0-BP3 status bit defines the size of the area to be software protection against program and erase
instructions
- Additional 512-bit secured OTP for unique identifier
- Automatically erases and verifies data at selected sector
- Automatically programs and verifies data at selected page by an internal algorithm that automatically times the
program pulse widths (Any page to be programed should have page in the erased state first)
- JEDEC 1-byte manufacturer ID and 2-byte device ID
- RES command for 1-byte Device ID
- Both REMS,REMS2 and REMS4 commands for 1-byte manufacturer ID and 1-byte device ID
- 1-byte Command code
- 1 I/O: 104MHz & 86MHz with 8 dummy cycles
- 4 I/O: 80MHz with 6 dummy cycles
- 2 I/O: 84MHz with 4 dummy cycles
16M-BIT [x 1/x 2/x 4] CMOS MXSMIO
5
TM
(SERIAL MULTI I/O) FLASH MEMORY
MX25L1635D
REV. 1.7, MAR. 30, 2009