TZMB11 VISHAY [Vishay Siliconix], TZMB11 Datasheet - Page 3

• Manufacturer Part Number: TZMB11
• Description: Silicon Epitaxial Planar Z-Diodes
• Manufacturer: VISHAY [Vishay Siliconix]

Characteristics (T
Document Number 85610
Rev. 3, 01-Apr-99
95 9602
95 9598
1000
Figure 2. Typical Change of Working Voltage
600
500
400
300
200
100
100
under Operating Conditions at T
10
0
1
Figure 1. Total Power Dissipation vs.
0
0
T
j
= 25 C
T
40
amb
Ambient Temperature
5
– Ambient Temperature ( C )
V
Z
80
10
– Z-Voltage ( V )
j
I
Z
= 25 _ C unless otherwise specified)
=5mA
120
15
amb
160
20
=25 ° C
200
25
Figure 4. Temperature Coefficient of Vz vs. Z–Voltage
95 9599
95 9600
95 9601
Figure 3. Typical Change of Working Voltage vs.
200
150
100
Figure 5. Diode Capacitance vs. Z–Voltage
1.3
1.2
1.1
1.0
0.9
0.8
15
10
–5
50
5
0
0
–60
0
0
V
Ztn
=V
10
0
T
Junction Temperature
5
www.vishay.de FaxBack [phone]
j
Zt
– Junction Temperature ( C )
/V
V
V
Z
(25 C)
Z
Z
60
20
– Z-Voltage ( V )
10
– Z-Voltage ( V )
Vishay Telefunken
TK
VZ
I
Z
=10 10
=5mA
120
30
15
–4
/K
T
V
j
= 25 C
R
180
40
20
TZMB...
= 2V
8 10
6 10
4 10
2 10
–2 10
–4 10
0
–4
–4
–4
–4
–4
–4
/K
/K
/K
/K
240
/K
/K
50
25
3 (6)