SI52146-A01AGM SILABS [Silicon Laboratories], SI52146-A01AGM Datasheet - Page 5
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SI52146-A01AGM
Manufacturer Part Number
SI52146-A01AGM
Description
PCI-EXPRESS GEN 1, GEN 2, & GEN 3 SIX OUTPUT CLOCK GENERATOR
Manufacturer
SILABS [Silicon Laboratories]
Datasheet
1.SI52146-A01AGM.pdf
(20 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI52146-A01AGM
Manufacturer:
SILICON LABS/芯科
Quantity:
20 000
Part Number:
SI52146-A01AGMR
Manufacturer:
SILICON LABS/芯科
Quantity:
20 000
Table 2. AC Electrical Specifications
Crystal
Long-term Accuracy
Clock Input
CLKIN Duty Cycle
CLKIN Rise and Fall Times
CLKIN Cycle to Cycle Jitter
CLKIN Long Term Jitter
Input High Voltage
Input Low Voltage
Input High Current
Input Low Current
DIFF at 0.7 V
DIFF Duty Cycle
Any DIFF Clock Skew from the
Earliest Bank to the Latest
Bank
DIFF Cycle to Cycle Jitter
Output PCIe Gen1 REFCLK
Phase Jitter
Output PCIe Gen2 REFCLK
Phase Jitter
Output PCIe Gen2 REFCLK
Phase Jitter
Output Phase Jitter Impact—
PCIe Gen3
DIFF Long Term Accuracy
DIFF Rising/Falling Slew Rate
Voltage High
Voltage Low
Crossing Point Voltage at
0.7 V Swing
Enable/Disable and Setup
Clock Stabilization from
Power-up
Stopclock Set-up Time
Parameter
T
RMS
RMS
RMS
RMS
Symbol
T
SKEW(win
V
T
T
V
STABLE
L
T
T
L
T
T
T
dow)
V
T
V
R
V
R
HIGH
ACC
ACC
LOW
I
CCJ
I
CCJ
LTJ
DC
IH
DC
OX
IL
SS
/T
IH
/T
IL
GEN1
GEN2
GEN2
GEN3
F
F
Td=12 ns), Low Band, F < 1.5 MHz
Includes PLL BW 8–16 MHz, Jitter
Includes PLL BW 8–16 MHz, Jitter
Measured between 0.2 V
Ftrk=1.5 MHz with BER = 1E-12
Includes PLL BW 1.5–22 MHz,
Measured at V
Preliminary Rev. 0.1
XIN/CLKIN pin, 0 < VIN <0.8
Includes PLL BW 2–4 MHz,
Measured differentially from
Measured at 0 V differential
Measured at 0 V differential
Measured at 0 V differential
Measured at 0 V differential
XIN/CLKIN pin, VIN = VDD
Peaking = 3 dB, ζ = 0.54,
Peaking = 3 dB, ζ = 0.54,
Td=12 ns), High Band,
1.5 MHz < F < Nyquist
Measured at VDD/2
Measured at VDD/2
ζ = 0.54, Td=10 ns,
Measured at V
CDR = 10 MHz)
XIN/CLKIN pin
XIN/CLKIN pin
Condition
±150 mV
0.8 V
DD
DD
/2 differential
DD
/2
DD
and
–0.3
10.0
Min
–35
300
0.5
47
45
—
—
—
—
—
—
—
—
—
—
2
0
0
0
0
1
Typ
0.5
35
40
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
2
2
Si52146
VDD+0.3
Max
1.15
250
250
350
108
100
550
4.0
0.8
3.0
3.1
1.0
1.8
53
35
55
50
50
—
—
—
8
Unit
ppm
V/ns
ppm
V/ns
mV
ms
uA
uA
ps
ps
ps
ps
ps
ps
ps
ps
ns
%
%
V
V
V
V
5