rf2422 RF Micro Devices, rf2422 Datasheet - Page 2

• Manufacturer Part Number: rf2422
• Description: 2.5 Ghz Direct Quadrature Modulator Rf2422
• Manufacturer: RF Micro Devices

RF2422
2 of 10
Absolute Maximum Ratings
Supply Voltage
Input LO and RF Levels
Operating Ambient Temperature
Storage Temperature
Carrier Input
Frequency Range
Power Level
Input VSWR
Modulation Input
Frequency Range
Reference Voltage (V
Maximum Modulation (I&Q)
Gain Asymmetry
Quadrature Phase Error
Input Resistance
Input Bias Current
RF Output
Output Power
Output Impedance
Output VSWR
Harmonic Output
Sideband Suppression
Carrier Suppression
IM
Broadband Noise Floor
Power Down
Turn On/Off Time
PD Input Resistance
Power Control “ON”
Power Control “OFF”
3
Suppression
Parameter
Parameter
REF
)
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Min.
800
2.0
-30
1.0
DC
25
30
30
25
50
-6
-3
-40 to +150
-0.5 to +7.5
-40 to +85
Rating
Specification
+10
1.15:1
1.8:1
1.2:1
3.5:1
1.3:1
Typ.
-145
-152
5:1
3.0
0.2
-35
1.2
30
50
35
35
35
30
3
V
REF
Max.
2500
Unit
dBm
V
250
100
2.8
°C
+6
40
+3
°C
DC
±1.0
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
dBm/Hz
dBm/Hz
Unit
dBm
dBm
MHz
MHz
dBc
kΩ
kΩ
dB
μA
dB
dB
dB
dB
ns
Ω
V
V
°
V
V
Caution! ESD sensitive device.
T=25°C, V
At 900MHz
At 1800MHz
At 2500MHz
LO=2GHz and -5dBm, I&Q=2.0V
At 900MHz
At 2000MHz
At 2500MHz
Intermodulation of the carrier and the desired
RF signal
Intermodulation of baseband signals
At 20MHz offset, V
Tied to V
At 850MHz
At 1900MHz
Threshold voltage
Threshold voltage
REF
CC
: ISIG, QSIG, IREF, and QREF.
=5V
Condition
CC
=5V.
Rev A6 DS070817
PP
, SSB