m6mgt331s8akt Renesas Electronics Corporation., m6mgt331s8akt Datasheet
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m6mgt331s8akt
Manufacturer Part Number
m6mgt331s8akt
Description
33,554,432-bit 2,097,152 - Word By 16-bit /4,194,304-word By 8-bit Cmos Flash Memory & 8,388,608-bit 524,288-word By 16-bit /1,048,576-word By 8-bi
Manufacturer
Renesas Electronics Corporation.
Datasheet
1.M6MGT331S8AKT.pdf
(3 pages)
Preliminary
Notice: This is not a final specification.
Some parametric limits are subject to change.
The M6MGB/T331S8AKT is a Stacked micro Multi Chip
Package (S- MCP) that contents 32M-bit Flash memory
and 8M-bit Static RAM in a 52-pin TSOP for lead free use.
32M-bit Flash memory is a 4,194,304 bytes / 2,097,152
words, , single power supply and high performance non-
volatile memory fabricated by CMOS technology for the
peripheral circuit and DINOR (Divided bit-line NOR IV)
architecture for the memory cell. All memory blocks are
locked and can not be programmed or erased, when F-WP#
is low. Using Software Lock Release function, program or
erase operation can be executed.
8M-bit SRAM is a 1,048,576 bytes / 524,288 words
asynchronous SRAM fabricated by CMOS technology for the
peripheral circuit .
Description
1
S-CE1#
F-VCC
S-VCC
GND
A-1 - A18
A19 - A20
DQ0 - DQ15
F-CE#
S-CE1#
S-CE2
OE#
WE#
F-WP#
S-VCC
F-RP#
S-CE2
WE#
DU
A20
A18
A17
A15
A14
A13
A12
A11
A10
A19
A7
A6
A5
A4
A3
A2
A1
A9
A8
:Vcc for Flash
:Vcc for SRAM
:GND for Flash/SRAM
:Flash/SRAM common Address
:Address for Flash
:Data I/O
:Flash Chip Enable
:SRAM Chip Enable1
:SRAM Chip Enable2
:Flash/SRAM Output Enable
:Flash/SRAM Write Enable
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
1
2
3
4
5
6
7
8
9
PIN CONFIGURATION (TOP VIEW)
M6MGB/T331S8AKT
8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BIT) CMOS SRAM
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS
10.49 mm
The M6MGB/T331S8AKT is suitable for a high
performance cellular phone and a mobile PC that are
required to be small mounting area, weight and small
power dissipation
Features
Access Time
Supply Voltage
Ambient Temperature
Package
Application
Mobile communication products
F-WP#
F-RP#
BYTE#
S-LB#
S-UB#
DU
:Flash Write protect
:Flash Reset Power Down
:Flash/SRAM Byte Enable
:SRAM Lower Byte
:SRAM Upper Byte
:Do not use
M6MGB/T331S8AKT
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
Stacked - MCP (micro Multi Chip Package)
Flash
SRAM
S-UB#
GND
DQ15/A-1
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
F-VCC
DQ11
DQ3
DQ10
DQ2
DQ9
DQ1
DQ8
DQ0
OE#
GND
F-CE#
A0
A16
BYTE#
S-LB#
Outer-lead finishing:Sn-Cu
70ns (Max.)
85ns (Max.)
VCC=2.7 ~ 3.0V
Ta=-40 ~ 85
52pin TSOP(Type-II),
Lead pitch 0.4mm
Rev.0.2.48a_bebz
Outline
52PTJ-A
FLASH MEMORY &
Renesas LSIs
C
Related parts for m6mgt331s8akt
m6mgt331s8akt Summary of contents
Page 1
Preliminary Notice: This is not a final specification. Some parametric limits are subject to change. Description The M6MGB/T331S8AKT is a Stacked micro Multi Chip Package (S- MCP) that contents 32M-bit Flash memory and 8M-bit Static RAM in a 52-pin TSOP ...
Page 2
Preliminary Notice: This is not a final specification. Some parametric limits are subject to change. MCP Block Diagram A20 A20 F-CE# F-WP# F-RP# BYTE A18 WE# OE# S-UB# S-LB# ...
Page 3
Nippon Bldg.,6-2,Otemachi 2-chome,Chiyoda-ku,Tokyo,100-0004 Japan Keep safety first in your circuit designs! Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with ...