MRF5P20180 MOTOROLA [Motorola, Inc], MRF5P20180 Datasheet - Page 2

• Manufacturer Part Number: MRF5P20180
• Description: RF POWER FIELD EFFECT TRANSISTOR
• Manufacturer: MOTOROLA [Motorola, Inc]

(1) Each side of device measured separately. Part is internally matched both on input and output.
(2) Measurements made with device in push–pull configuration.
ESD PROTECTION CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS (1)
ON CHARACTERISTICS (1)
DYNAMIC CHARACTERISTICS (1)
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) (2) 2–carrier W–CDMA, 3.84 MHz Channel Bandwidth Carriers, ACPR and
IM3 measured in 3.84 MHz Bandwidth. Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF.
MRF5P20180R6
Human Body Model
Machine Model
Charge Device Model
Zero Gate Voltage Drain Leakage Current
Zero Gate Voltage Drain Leakage Current
Gate–Source Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
Drain–Source On–Voltage
Forward Transconductance
Reverse Transfer Capacitance
Common–Source Amplifier Power Gain
Drain Efficiency
Third Order Intermodulation Distortion
Adjacent Channel Power Ratio
Input Return Loss
2
(V
(V
(V
(V
(V
(V
(V
(V
(V
f1 = 1932.5 MHz, f2 = 1942.5 MHz and f1 = 1977.5 MHz,
f2 = 1987.5 MHz)
(V
f1 = 1932.5 MHz, f2 = 1942.5 MHz and f1 = 1977.5 MHz,
f2 = 1987.5 MHz)
(V
f1 = 1932.5 MHz, f2 = 1942.5 MHz and f1 = 1977.5 MHz,
f2 = 1987.5 MHz; IM3 measured over 3.84 MHz BW @ f1 –10 MHz
and f2 +10 MHz referenced to carrier channel power.)
(V
f1 = 1932.5 MHz, f2 = 1942.5 MHz and f1 = 1977.5 MHz,
f2 = 1987.5 MHz; ACPR measured over 3.84 MHz BW @ f1 – 5 MHz
and f2 +5 MHz.)
(V
f1 = 1932.5 MHz, f2 = 1942.5 MHz and f1 = 1977.5 MHz,
f2 = 1987.5 MHz)
DS
DS
GS
DS
DS
GS
DS
DS
DD
DD
DD
DD
DD
= 65 Vdc, V
= 28 Vdc, V
= 5 Vdc, V
= 10 Vdc, I
= 28 Vdc, I
= 10 Vdc, I
= 10 Vdc, I
= 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 28 Vdc, P
= 28 Vdc, P
= 28 Vdc, P
= 28 Vdc, P
= 28 Vdc, P
DS
D
D
D
D
GS
GS
out
out
out
out
out
= 200 µAdc)
= 850 mAdc)
= 2 Adc)
= 2 Adc)
= 0 Vdc)
= 0 Vdc)
= 0)
= 38 W Avg., I
= 38 W Avg., I
= 38 W Avg., I
= 38 W Avg., I
= 38 W Avg., I
Characteristic
Test Conditions
DQ
DQ
DQ
DQ
DQ
Freescale Semiconductor, Inc.
= 2 x 800 mA,
= 2 x 800 mA,
= 2 x 800 mA,
= 2 x 800 mA,
= 2 x 800 mA,
(T
C
For More Information On This Product,
= 25°C unless otherwise noted)
GS
= 0 Vdc)
Go to: www.freescale.com
Symbol
V
V
V
ACPR
I
I
I
DS(on)
C
GS(th)
GS(Q)
G
IM3
GSS
IRL
DSS
DSS
g
η
rss
fs
ps
12.5
Min
2.5
23
—
—
—
—
—
—
—
—
—
—
MOTOROLA RF DEVICE DATA
–37.5
0.26
Typ
–41
–16
2.7
3.6
1.7
14
26
—
—
—
M3 (Minimum)
C7 (Minimum)
5
2 (Minimum)
Class
Max
–35
–38
3.5
0.3
10
–9
—
—
—
—
—
1
1
µAdc
µAdc
µAdc
Unit
Vdc
Vdc
Vdc
dBc
dBc
dB
dB
pF
%
S