r1rw0408di Renesas Electronics Corporation., r1rw0408di Datasheet
r1rw0408di
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r1rw0408di Summary of contents
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... CMOS process (6-transistor memory cell) and high speed circuit designing technology most appropriate for the application which requires high speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. The R1RW0408DI is packaged in 400-mil 36-pin SOJ for high density surface mounting. ...
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... R1RW0408DI Series Pin Arrangement CS# I/O1 I/ I/O3 I/O4 WE# Pin Description Pin name A0 to A18 I/O1 to I/O8 CS# OE# WE Rev.1.00, Mar.12.2004, page 36-pin SOJ A18 A17 A16 A15 ...
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... R1RW0408DI Series Block Diagram (LSB) A14 A13 A12 A5 A6 Row A7 decoder A11 A10 A3 A1 (MSB) CS I/O1 . Input data . control . I/O8 WE# CS# OE# CS Rev.1.00, Mar.12.2004, page 1024-row 32-column 16-block 8-bit (4,194,304 bits) Column I/O Column decoder A8 A9 A18 A16 A17 A15 (LSB) ...
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... R1RW0408DI Series Operation Table CS# OE# WE# Mode H Standby Output disable Read Write Write Note Absolute Maximum Ratings Parameter Supply voltage relative Voltage on any pin relative Power dissipation Operating temperature Storage temperature Storage temperature under bias Notes: 1 ...
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... R1RW0408DI Series DC Characteristics ( + 3 Parameter Symbol Input leakage current Output leakage current Operation power supply current I CC Standby power supply current SB1 Output voltage Capacitance ( 1.0 MHz) Parameter Symbol 1 Input capacitance* ...
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... R1RW0408DI Series AC Characteristics ( + 3.3 V 0.3 V, unless otherwise noted.) CC Test Conditions Input pulse levels: 3.0 V/0.0 V Input rise and fall time Input and output timing reference levels: 1.5 V Output load: See figures (Including scope and jig) D Zo=50 OUT Output load (A) Read Cycle Parameter ...
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... R1RW0408DI Series Write Cycle Parameter Write cycle time Address valid to end of write Chip select to end of write Write pulse width Address setup time Write recovery time Data to write time overlap Data hold from write time Write disable to output in low-Z Output disable to output in high-Z Write enable to output in high-Z Notes: 1 ...
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... R1RW0408DI Series Timing Waveforms Read Timing Waveform (1) (WE Address CS# OE# High impedance D OUT Read Timing Waveform (2) (WE Address OUT Rev.1.00, Mar.12.2004, page Valid address ACS OLZ t CLZ Valid data , CS OE Valid address ...
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... R1RW0408DI Series Read Timing Waveform (3) (WE CS CLZ High D OUT impedance Write Timing Waveform (1) (WE# Controlled) Address OE WE#* t OHZ D OUT D IN Rev.1.00, Mar.12.2004, page CS OE ACS Valid data t WC Valid address ...
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... R1RW0408DI Series Write Timing Waveform (2) (CS# Controlled) Address OUT D IN Rev.1.00, Mar.12.2004, page Valid address WHZ OW 5 High impedance Valid data 4 * ...
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... Revision History Rev. Date Contents of Modification Page Description 0.01 Sep. 30, 2003 Initial issue 1.00 Mar.12.2004 Deletion of Preliminary R1RW0408DI Series Data Sheet ...
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Sales Strategic Planning Div. Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble ...