MRF9200LR3_06 FREESCALE [Freescale Semiconductor, Inc], MRF9200LR3_06 Datasheet

MRF9200LR3_06

Manufacturer Part Number

MRF9200LR3_06

Description

880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs

Manufacturer

FREESCALE [Freescale Semiconductor, Inc]

Datasheet

1.MRF9200LR3_06.pdf (12 pages)

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RF Device Data

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

N - Channel Enhancement - Mode Lateral MOSFETs

frequencies to 1000 MHz. The high gain and broadband performance of these

devices make them ideal for large - signal, common - source amplifier applica-

tions in 26 volt base station equipment.

• Typical Single - Carrier N - CDMA Performance @ 880 MHz: V

• Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 40 Watts CW

Features

• Characterized with Series Equivalent Large - Signal Impedance Parameters

• Internally Matched for Ease of Use

• Integrated ESD Protection

• Low Gold Plating Thickness on Leads, 40

• RoHS Compliant

• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

Table 1. Maximum Ratings

Table 2. Thermal Characteristics

Drain- Source Voltage

Gate- Source Voltage

Total Device Dissipation @ T

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

Thermal Resistance, Junction to Case

Designed for broadband commercial and industrial applications with

1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to

2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Traffic Codes 8 Through 13). Channel Bandwidth = 1.2288 MHz.

Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF.

Output Power

Derate above 25°C

Case Temperature 60°C, 200 W CW

Case Temperature 80°C, 40 W CW

Power Gain — 17.5 dB

Drain Efficiency — 25%

ACPR @ 750 kHz Offset — - 46.5 dBc in 30 kHz Bandwidth

access the MTTF calculators by product.

Select Documentation/Application Notes - AN1955.

= 2400 mA, P

out

= 40 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging,

= 25°C

Characteristic

Rating

″ Nominal.

= 26 Volts,

Symbol

DSS

θJC

stg

CASE 465B - 03, STYLE 1

CASE 465C - 02, STYLE 1

Document Number: MRF9200L

880 MHz, 40 W AVG., 26 V

MRF9200LSR3

MRF9200LR3

LATERAL N - CHANNEL

MRF9200LR3

RF POWER MOSFETs

NI - 880S

NI - 880

MRF9200LR3 MRF9200LSR3

SINGLE N - CDMA

- 65 to +150

Value

- 0.5, +65

- 0.5, +15

Value

0.28

0.34

625

150

200

3.6

(1,2)

Rev. 3, 5/2006

W/°C

°C/W

Unit

Vdc

°C

Related parts for MRF9200LR3_06

MRF9200LR3_06 Summary of contents

Page 1

... Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applica- tions in 26 volt base station equipment. • ...

Page 2

Table 3. ESD Protection Characteristics Test Conditions Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Table 4. Electrical Characteristics (T Characteristic Off Characteristics Zero Gate Voltage Drain Leakage ...

Page 3

V BIAS + C34 INPUT Z12 C9 Z13 DRAIN C11 C10 Z1 0.015″ x 0.083″ Microstrip Z2 0.048″ x 0.083″ Microstrip Z3 0.352″ x 0.083″ Microstrip Z4 0.086″ x 0.050″ Microstrip Z5 ...

Page 4

C34 V GG C31 C30 MRF9200 Drain Rev. 3A Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during ...

Page 5

D 18.6 18.4 18.2 18 17.8 17.6 17.4 ALT1 17.2 17 840 Figure 3. Single - Carrier N - CDMA Broadband Performance @ P 18 17.8 17.6 η D 17.4 17.2 17 16.8 IRL 16 ...

Page 6

Vdc 1800 880 MHz 880.1 MHz −30 Two−Tone Measurements −40 3rd Order −50 −60 5th Order −70 7th Order − OUTPUT POWER (WATTS) ...

Page 7

Figure 11. Power Gain and Drain Efficiency Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS ...

Page 8

Figure 14. MTTF Factor versus Junction Temperature 100 10 1 0.1 IS−95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.2288 MHz Channel Bandwidth 0.01 Carriers. ACPR Measured in 30 ...

Page 9

Figure 17. Series Equivalent Source and Load Impedance RF Device Data Freescale Semiconductor = 2 Ω 895 MHz Z source f = 865 MHz Vdc 2400 mA ...

Page 10

MRF9200LR3 MRF9200LSR3 10 NOTES RF Device Data Freescale Semiconductor ...

Page 11

(FLANGE bbb (INSULATOR) bbb (LID) ccc (FLANGE ...

Page 12

How to Reach Us: Home Page: www.freescale.com E - mail: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. Alma School Road Chandler, Arizona 85224 +1 - 800- 521- 6274 480- 768- ...

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