MRF9200LR3_06 FREESCALE [Freescale Semiconductor, Inc], MRF9200LR3_06 Datasheet - Page 6

• Manufacturer Part Number: MRF9200LR3_06
• Description: 880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs
• Manufacturer: FREESCALE [Freescale Semiconductor, Inc]

6
MRF9200LR3 MRF9200LSR3
−20
−30
−40
−50
−60
−70
−80
1
Figure 7. Intermodulation Distortion Products
V
f1 = 880 MHz, f2 = 880.1 MHz
Two−Tone Measurements
DD
3rd Order
= 26 Vdc, I
5th Order
P
out
DQ
, OUTPUT POWER (WATTS) PEP
versus Output Power
= 1800 mA
10
7th Order
50
40
30
20
10
60
58
56
54
52
50
48
0
Figure 10. Single - Carrier N - CDMA ACPR, ALT1, Power
31
1
V
N−CDMA IS−95 Pilot, Sync, Paging, Traffic Codes 8 Through 13
P1dB = 53.1 dBm (204.1 W)
Gain and Drain Efficiency versus Output Power
DD
Figure 9. Pulse CW Output Power versus
ACPR
= 26 Vdc, I
TYPICAL CHARACTERISTICS
ALT1
100
η
33
D
P
out
DQ
, OUTPUT POWER (WATTS) AVG.
= 1800 mA, f = 880 MHz
P
P3dB = 54.25 dBm (266 W)
in
, INPUT POWER (dBm)
Input Power
35
V
Pulsed CW, 8 μsec(on), 1 msec(off)
f = 880 MHz
DD
10
= 26 Vdc, I
G
ps
37
−10
−20
−30
−40
−50
−60
0.1
DQ
Figure 8. Intermodulation Distortion Products
= 1800 mA
7th Order
V
Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 880 MHz
5th Order
3rd Order
DD
39
= 26 Vdc, P
Ideal
Actual
versus Tone Spacing
TWO−TONE SPACING (MHz)
out
100
41
= 200 W (PEP), I
0
−20
−40
−60
−80
−100
1
Freescale Semiconductor
DQ
= 1800 mA
RF Device Data
10