BZT52-V VISHAY [Vishay Siliconix], BZT52-V Datasheet
BZT52-V
Related parts for BZT52-V
BZT52-V Summary of contents
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... Valid provided that electrodes are kept at ambient temperature Document Number 85760 Rev. 1.5, 21-Apr-05 e3 Test condition Symbol P tot P tot 2 pad areas 2 pad areas Test condition Symbol R thJA BZT52-V-Series Vishay Semiconductors Value Unit 2) mW 500 mW 1) 410 Value Unit 1) °C/W 300 150 ° 150 °C www.vishay.com 1 ...
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... BZT52-V-Series Vishay Semiconductors Electrical Characteristics Partnumber Marking Zener Voltage Code Range ZT1 V min BZT52C2V4-V W1 2.2 BZT52C2V7-V W2 2.5 BZT52C3V0-V W3 2.8 BZT52C3V3-V W4 3.1 BZT52C3V6-V W5 3.4 BZT52C3V9-V W6 3.7 BZT52C4V3 BZT52C4V7-V W8 4.4 BZT52C5V1-V W9 4.8 BZT52C5V6-V WA 5.2 BZT52C6V2-V WB 5.8 BZT52C6V8-V WC 6.4 BZT52C7V5 BZT52C8V2-V WE 7.7 BZT52C9V1-V WF 8.5 BZT52C10-V WG 9.4 BZT52C11-V WH 10.4 BZT52C12-V WI 11.4 BZT52C13-V WK 12.4 BZT52C15-V WL 13.8 BZT52C16-V WM 15.3 BZT52C18-V WN 16.8 BZT52C20-V WO 18.8 BZT52C22 ...
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... BZT52-V-Series Vishay Semiconductors Test Temp. Reverse Admissible Zener Coefficient Voltage Current ZT1 ZT1 amb 100 nA, 45 ° ...
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... BZT52-V-Series Vishay Semiconductors Typical Characteristics (Tamb = 25 °C unless otherwise specified) Figure 1. Forward characteristics 18888 Figure 2. Admissible Power Dissipation vs. Ambient Temperature ° C Figure 3. Pulse Thermal Resistance vs. Pulse Duration www.vishay.com 4 Figure 4. Dynamic Resistance vs. Zener Current Figure 5. Capacitance vs. Zener Voltage Figure 6. Dynamic Resistance vs. Zener Current Document Number 85760 Rev ...
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... Figure 7. Dynamic Resistance vs. Zener Current °C/W Figure 8. Thermal Differential Resistance vs. Zener Voltage Figure 9. Dynamic Resistance vs. Zener Voltage Document Number 85760 Rev. 1.5, 21-Apr-05 BZT52-V-Series Vishay Semiconductors °C Figure 10. Temperature Dependence of Zener Voltage vs. Zener Voltage Figure 11. Change of Zener Voltage vs. Junction Temperature °C Figure 12 ...
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... BZT52-V-Series Vishay Semiconductors Figure 13. Change of Zener Voltage vs. Junction Temperature Figure 14. Change of Zener voltage from turn- the point of thermal equilibrium vs. Zener voltage Figure 15. Change of Zener voltage from turn- the point of thermal equilibrium vs. Zener voltage www.vishay.com 6 Document Number 85760 Rev. 1.5, 21-Apr-05 ...
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... Document Number 85760 Rev. 1.5, 21-Apr-05 Figure 16. Breakdown Characteristics Figure 17. Breakdown Characteristics BZT52-V-Series Vishay Semiconductors www.vishay.com 7 ...
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... BZT52-V-Series Vishay Semiconductors Package Dimensions in mm (Inches) 0.1 (0.004) max. 0.55 (0.022) Cathode Band 1.70 (0.067) 1.40 (0.055) www.vishay.com 8 Figure 18. Breakdown Characteristics 1.35 (0.053) max. 0.25 (0.010) min. Mounting Pad Layout 1.40 (0.055) 0.72 (0.028) 0.15 (0.006) max. ISO Method E 17432 Document Number 85760 Rev. 1.5, 21-Apr-05 ...
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... Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Document Number 85760 Rev. 1.5, 21-Apr-05 and may do so without further notice. BZT52-V-Series Vishay Semiconductors www.vishay.com 9 ...
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All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or ...