DS1245ABP-100-IND DALLAS [Dallas Semiconductor], DS1245ABP-100-IND Datasheet

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DS1245ABP-100-IND

Manufacturer Part Number
DS1245ABP-100-IND
Description
1024k Nonvolatile SRAM
Manufacturer
DALLAS [Dallas Semiconductor]
Datasheet
FEATURES
www.dalsemi.com
10 years minimum data retention in the
absence of external power
Data is automatically protected during power
loss
Replaces 128k x 8 volatile static RAM,
EEPROM or Flash memory
Unlimited write cycles
Low-power CMOS
Read and write access times as fast as 70 ns
Lithium energy source is electrically
disconnected to retain freshness until power is
applied for the first time
Full 10% V
Optional 5% V
(DS1245AB)
Optional industrial temperature range of
-40 C to +85 C, designated IND
JEDEC standard 32-pin DIP package
New PowerCap Module (PCM) package
-
-
-
-
Directly surface-mountable module
Replaceable snap-on PowerCap provides
lithium backup battery
Standardized pinout for all nonvolatile
SRAM products
Detachment feature on PowerCap allows
easy removal using a regular screwdriver
CC
operating range (DS1245Y)
CC
operating range
1 of 12
PIN ASSIGNMENT
PIN DESCRIPTION
A0 - A16
DQ0 - DQ7
V
GND
NC
CE
WE
OE
GND
CC
DQ7
DQ6
DQ5
DQ4
DQ3
DQ2
DQ1
DQ0
A15
A16
V
WE
NC
NC
OE
CE
CC
1024k Nonvolatile SRAM
32-PIN ENCAPSULATED PACKAGE
34-PIN POWERCAP MODULE (PCM)
GND
DQ0
DQ1
DQ2
A16
A14
A12
NC
(USES DS9034PC POWERCAP)
A7
A6
A5
A4
A3
A2
A1
A0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
740 MIL EXTENDED
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
GND V
- Address Inputs
- Data In/Data Out
- Chip Enable
- Write Enable
- Output Enable
- Power (+5V)
- Ground
- No Connect
BAT
DS1245Y/AB
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
V
A15
NC
WE
A13
A8
A9
A11
OE
A10
CE
DQ7
DQ6
DQ5
DQ4
DQ3
34
33
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
CC
111899
NC
NC
A14
A13
A12
A11
A10
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0

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DS1245ABP-100-IND Summary of contents

Page 1

FEATURES 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 128k x 8 volatile static RAM, EEPROM or Flash memory Unlimited write cycles Low-power CMOS Read and write access ...

Page 2

DESCRIPTION The DS1245 1024k Nonvolatile SRAMs are1,048,576-bit, fully static, nonvolatile SRAMs organized as 131,072 words by 8 bits. Each complete NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors V occurs, the lithium energy source ...

Page 3

PACKAGES The DS1245 devices are available in two packages: 32-pin DIP and 34-pin PowerCap Module (PCM). The 32-pin DIP integrates a lithium battery, an SRAM memory and a nonvolatile control function into a single package with a JEDEC-standard 600-mil DIP ...

Page 4

CAPACITANCE PARAMETER Input Capacitance Input/Output Capacitance AC ELECTRICAL CHARACTERISTICS PARAMETER Read Cycle Time Access Time to Output Valid OE to Output Valid Output Active OE CE Output High Z from Deselection Output Hold from Address Change Write ...

Page 5

AC ELECTRICAL CHARACTERISTICS PARAMETER Read Cycle Time Access Time to Output Valid OE to Output Valid Output Active OE CE Output High Z from Deselection Output Hold from Address Change Write Cycle Time Write Pulse Width Address ...

Page 6

READ CYCLE SEE NOTE 1 WRITE CYCLE 1 SEE NOTES and DS1245Y/AB ...

Page 7

WRITE CYCLE 2 SEE NOTES and 13 POWER-DOWN/POWER-UP CONDITION DS1245Y/AB ...

Page 8

POWER-DOWN/POWER-UP TIMING PARAMETER , at V before Power-Down slew from slew from after Power- PARAMETER ...

Page 9

DC TEST CONDITIONS Outputs Open Cycle = 200 ns for operating current All voltages are referenced to ground ORDERING INFORMATION DS1245 TTP - SSS - III DS1245Y/AB NONVOLATILE SRAM, 32-PIN, 740-MIL EXTENDED DIP MODULE AC TEST CONDITIONS Output Load: 100 ...

Page 10

DS1245Y/AB NONVOLATILE SRAM, 34-PIN POWERCAP MODULE PKG DIM MIN A 0.920 B 0.980 0.052 E 0.048 F 0.015 G 0.020 DS1245Y/AB INCHES NOM MAX 0.925 0.930 0.985 0.990 - 0.080 0.055 0.058 0.050 0.052 ...

Page 11

DS1245Y/AB NONVOLATILE SRAM, 34-PIN POWERCAP MODULE WITH POWERCAP ASSEMBLY AND USE Reflow soldering Dallas Semiconductor recommends that PowerCap Module bases experience one pass through solder reflow oriented label-side up (live-bug). Hand soldering and touch-up Do not touch soldering iron to ...

Page 12

RECOMMENDED POWERCAP MODULE LAND PATTERN RECOMMENDED POWERCAP MODULE SOLDER STENCIL INCHES PKG DIM MIN NOM A - 1.050 B - 0.826 C - 0.050 D - 0.030 E - 0.112 INCHES PKG DIM MIN NOM A - 1.050 B - ...

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