flm1011-12f Eudyna Devices Inc, flm1011-12f Datasheet

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flm1011-12f

Manufacturer Part Number
flm1011-12f
Description
X, Ku-band Internally Matched Fet
Manufacturer
Eudyna Devices Inc
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FLM1011-12F
Manufacturer:
FUJI
Quantity:
101
Part Number:
FLM1011-12F
Manufacturer:
SUMI
Quantity:
20 000
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
CASE STYLE: IB
Edition 1.3
August 2004
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
FEATURES
• High Output Power: P 1dB = 40.5dBm (Typ.)
• High Gain: G 1dB = 6.0dB (Typ.)
• High PAE: η add = 25% (Typ.)
• Low IM 3 = -45dBc@Po = 29.5dBm
• Broad Band: 10.7 ~ 11.7GHz
• Impedance Matched Zin/Zout = 50Ω
• Hermetically Sealed
DESCRIPTION
The FLM1011-12F is a power GaAs FET that is internally matched for
standard communication bands to provide optimum power and gain in a
50 ohm system.
Eudyna’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate Source Breakdown Voltage
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Drain Current
Power-Added Efficiency
Gain Flatness
3rd Order Intermodulation
Distortion
Thermal Resistance
Channel Temperature Rise
1. The drain-source operating voltage (V DS ) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 32.0 and -5.6 mA respectively with
gate resistance of 50Ω.
Item
Item
Symbol
V GSO
∆T ch
G 1dB
P 1dB
I DSS
η add
Symbol
I dsr
IM 3
R th
g m
∆ G
V p
V GS
V DS
T stg
T ch
P T
V DS = 5V, V GS = 0V
V DS = 5V, I DS = 3600mA
V DS = 5V, I DS = 300mA
I GS = -340µA
V DS = 10V
f = 10.7 ~ 11.7 GHz
I DS = 0.6 I DSS (Typ.)
Z S = Z L = 50Ω
Channel to Case
10V x I dsr x R th
f = 11.7GHz, ∆f = 10MHz
2-Tone Test
Pout = 29.5 dBm S.C.L.
Test Conditions
1
Condition
T c = 25°C
X, Ku-Band Internally Matched FET
39.5
Min.
-0.5
5.0
-42
-5
-
-
-
-
-
-
-
FLM1011-12F
-65 to +175
Rating
6000
5000
3600
57.6
Limit
Typ.
40.5
175
-1.5
6.0
-45
2.3
15
25
-5
-
-
-
G.C.P.: Gain Compression Point
9000
4500
Max.
±0.6
-3.0
2.6
80
-
-
-
-
-
-
°C/W
Unit
dBm
Unit
dBc
°C
°C
mA
mS
mA
°C
W
dB
dB
V
V
%
V
V

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flm1011-12f Summary of contents

Page 1

... Broad Band: 10.7 ~ 11.7GHz • Impedance Matched Zin/Zout = 50Ω • Hermetically Sealed DESCRIPTION The FLM1011-12F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain ohm system. Eudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25° ...

Page 2

... FLM1011-12F X, Ku-Band Internally Matched FET POWER DERATING CURVE 100 Case Temperature (°C) OUTPUT POWER vs. FREQUENCY V DS =10V, P 1dB 10.8 11.1 11.2 11.4 Frequency (GHz) OUTPUT POWER & vs. INPUT POWER =10V f1 = 11.7 GHz f2 = 11.71 GHz 33 2-tone test 150 ...

Page 3

... FLM1011-12F S 21 +90° 0.2 0.1 10.5 GHz 10.7 10.5 GHz 10.9 1 0° 10.7 11.1 10.9 11.1 11.3 11.3 11.5 11.7 11.5 11.9 11.9 11.7 -90° S22 MAG ANG .389 6.8 .362 -3.3 3.2 .315 -14.9 .278 -29.5 .247 -44.1 .222 -61.7 .200 -78.4 .180 -98 ...

Page 4

... FLM1011-12F X, Ku-Band Internally Matched FET 2-R 1.6±0.15 (0.063) For further information please contact: Eudyna Devices USA Inc. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: (408) 232-9500 FAX: (408) 428-9111 www.us.eudyna.com Eudyna Devices Europe Ltd. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ ...

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