flm1011-20f Eudyna Devices Inc, flm1011-20f Datasheet

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flm1011-20f

Manufacturer Part Number
flm1011-20f
Description
X,ku-band Internally Matched Fet
Manufacturer
Eudyna Devices Inc
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FLM1011-20F
Manufacturer:
FINISAR
Quantity:
21
Edition 1.2
September 2004
FEATURES
・High Output Power: P1dB=43.0dBm(Typ.)
・High Gain: G1dB=7.0dB(Typ.)
・High PAE: ηadd=27%(Typ.)
・Broad Band: 10.7~11.7GHz
・Impedance Matched Zin/Zout = 50Ω
・Hermetically Sealed Package
DESCRIPTION
The FLM1011-20F is a power GaAs FET that is internally matched
for standard communication bands to provide optimum power and
gain in a 50Ω system.
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25
Drain Current
Transconductance
Pinch-off Voltage
CASE STYLE: IK
RECOMMENDED OPERATING CONDITION(Case Temperature Tc=25
Gate-Source Breakdown Voltage
Output Power at 1dB G.C.P.
Power-added Efficiency
Gain Flatness
Storage Temperature
Forward Gate Current
Reverse Gate Current
Drain Current
Channel Temperature Rise
Power Gain at 1dB G.C.P.
3rd Order Intermodulation
Distortion
Thermal Resistance
Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5kW)
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25
Channel Temperature
DC Input Voltage
Gate-Source Voltage
ESD
Drain-Source Voltage
Total Power Dissipation
Item
Item
Item
Class III
Symbol
V
I
∆G
∆T
g
V
P
G
η
DSS
I
IM
Symbol
GSO
R
m
add
1dB
dsr
p
1dB
V
ch
I
I
th
3
GF
GR
DS
2000V ~
Symbol
V
T
T
V
P
stg
ch
DS
GS
V
V
V
I
1
T
V
f=10.7 - 11.7 GHz
I
Zs=Z
f= 11.7 GHz
Δf=10MHz, 2-tone Test
Pout=31.0dBm (S.C.L.)
GS
Channel to Case
10V x Idsr X Rth
DS
DS
DS
DS
DS
Test Conditions
=-600µA
=0.60I
=5V, V
=5V, I
=5V, I
=10V
G.C.P.:Gain Compression Point, S.C.L.:Single Carrier Level
L
=50Ω
Condition
DS
DS
DSS
R
R
GS
G
=6480mA
=600mA
G
=0V
=25Ω
(typ)
=25Ω
X,Ku-Band Internally Matched FET
-65 to +175
-0.5
Min.
-5.0
-42.0
42
6.0
°
Rating
-
-
C)
-
-
-
-
°
-
175
C)
15
93.7
-5
Limit
FLM1011-20F
-45.0
Typ.
-1.5
Limit
10.8
6.0
27
1.4
10
-11.2
43
7.0
10
-
-
64
-
°
C)
16.2
-3.0
Max.
1.2
100
1.6
7.2
-
-
-
-
-
-
Unit
dBm
o
dBc
mA
mA
C /W
Unit
dB
V
V
dB
o
A
S
Unit
A
o
%
C
o
V
W
C
V
V
C

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flm1011-20f Summary of contents

Page 1

... PAE: ηadd=27%(Typ.) ・Broad Band: 10.7~11.7GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION The FLM1011-20F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50Ω system. ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25 Item ...

Page 2

... FLM1011-20F X-Band Internally Matched FET POWER DERATING CURVE 100 100 Case Temperature [oC] Output Power vs. Frequency VDS=10V, IDS(DC)=6A 45 P1dB 10.45 10.7 10.95 11.2 Frequency [GHz 150 200 24 -20 -25 -30 38dBm -35 36dBm -40 -45 34dBm ...

Page 3

... FLM1011-20F +90° 11.2GHz 11.2GHz 10.7GHz 10.7 2 11.7GHz | 10.2GHz 21 12.2GHz 12.2GHz 10.2GHz 10 0.2 -90° ...

Page 4

... FLM1011-20F X-Band Internally Matched FET ■ Package Out Line Case Style : IK PIN ASSIGNMENT 1 : GATE 2 : SOURCE 3 : DRAIN 4 : SOURCE Unit : mm 4 ...

Page 5

... FAX +81-55-275-9461 Sales Division 1, Kanai-cho, Sakae-ku Yokohama,244-0845,Japan TEL +81-45-853-8156 FAX +81-45-853-8170 FLM1011-20F X-Band Internally Matched FET CAUTION Eudyna Devices Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: ・Do not put these products into the mouth. ...

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